Electrical Characteristics and Crystal Quality Analysis of Thin-Body $\langle 100\rangle$ Channel Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Using Two-Step Elevated Silicon Epitaxial Process
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概要
- 論文の詳細を見る
A two-step source/drain elevated epitaxial process for ultra thin fully depleted (FD) silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) is proposed. The relation between the crystal quality of the source/drain extension regions and channel orientation with the silicon epitaxial process is analyzed by transmission electron microscopy (TEM). No defect is observed in the source/drain extension regions on the $\langle 100\rangle$ channel, whereas crystal defects are observed on the $\langle 110\rangle$ channel. Crystal defect generation in the source/drain extension regions is closely related to channel orientation. Moreover, a low parasitic resistance of thin-body SOI MOSFETs is realized in $\langle 100\rangle$ channel SOI-MOSFET, and high $I_{\text{on}}(I_{\text{ds}})$–$I_{\text{off}}$ characteristics and the suppression of the roll-off characteristics of thin-body SOI MOSFETs with the $\langle 100\rangle$ channel orientation are shown. It is confirmed that thin-body SOI MOSFETs with a two-step source/drain elevated epitaxial process have a high potential for the application in the 22 nm generation.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
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Iwamatsu Toshiaki
Advanced Device Development Dept. Renesas Technology Corp.
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Oda Hidekazu
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Ishikawa Kozo
Renesas Semiconductor Engineering, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Terada Takashi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Inoue Yasuo
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Iwamatsu Toshiaki
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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