Neutron Activation Analysis of Ultrahigh-Purity Ti-Al Alloys in Comparison with Glow-Discharge Mass Spectrometry

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概要

• 論文の詳細を見る
• Japan Institute of Metalsの論文
• 2002-02-01

著者

• HAYASHI Yoshihiko

  Research Reactor Institute, Kyoto University

• ABIKO Kenji

  Institute for Materials Research, Tohoku University

• Horino Y

  Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)

• TAKAKI Seiichi

  Institute for Materials Research, Tohoku University

• HORINO Yuji

  National Institute of Advanced Industrial Science and Technology

• KINOMURA Atsushi

  National Institute of Advanced Industrial Science and Technology

• NAKANO Yukihiro

  Research Reactor Institute, Kyoto University

• Horiba Yasutaka

  System Lsi Laboratory Mitsubishi Electric Corporation

• Abiko Kenji

  Institute For Materials Research Tohoku University

• Hirano Y

  Advanced Device Development Dept. Renesas Technology Corp.

• Takaki Seiichi

  Institute For Materials Research Tohoku University

• Horino Yuji

  National Inst. Of Advanced Industrial Sci. And Technol. Kansai Osaka Jpn

• Nakano Yukihiro

  Research Reactor Institute Kyoto University

• Takaki S

  Institute For Materials Research Tohoku University

• Kinomura A

  National Institute Of Advanced Industrial Science And Technology

• Hayashi Y

  Research Reactor Institute Kyoto University

• Hayashi Yoshihiko

  Research Reactor Institute Kyoto University

関連論文

• Surface Sink Effects on Void Formation in GaSb and InSb under Ion Irradiation
• Chemical Form of Precipitate by Coprecipitation with Palladium for Separation of Trace Elements in High-Purity Metals
• Determination of Trace Element Quantities in Ultra High-Purity Iron by Spectrochemical Analysis after Chemical Separation
• Determination of Trace Amounts of Sulfur in High-Purity Iron by Infrared Absorption after Combustion: Removal of Sulfur Blank
• Direct Measurement of Transient Drain Currents in Partially-Depleted SOI N-Channel MOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
• A Sub 1-V L-Band Low Noise Amplifier SOI CMOS(Special Section on Analog Circuit Techniques and Related Topics)
• A CAD-Compatible SOI-CMOS Gate Array Using 0.35 μm Partially-Depleted Transistors (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
• Analyses of the Radiation-Caused Characteristics Change in SOI MOSFETs Using Field Shield Isolation
• Suppression of Self-Heating in Hybrid Trench Isolated SOI MOSFETs with Poly-Si plug and W plug
• OE-020 Lnk Adaptor Protein Regulates the Signal Cascade of Mobilization, Differentiation, Proliferation and Neovascularization of Endothelial Progenitor Cells (EPCs)(Molecular biology, vascular-1 (H) OE4,Oral Presentation (English),The 70th Anniversary An
• A Single-Chip MPEG-2 422P@ML Video, Audio, and System Encoder with a 162MHz Media-processor Core and Dual Motion Estimation Cores
• An Embedded Software Scheme for a Real-Time Single-Chip MPEG-2 Encoder System with a VLIW Media Processor Core (Special Issue on Low-Power High-Performance VLSI Processors and Technologies)
• Formation of Mono-Layer Honeycomb Structure in High-Purity Iron by Single Pass Hot-rolling
• Formation of Giant Columnar Grains in High-Purity Iron by Hot-Rolling
• Formation of Anomalous Defect Structure on GaSb Surface by Low Temperature Sn Ion-Implantation
• A Design of High-Speed 4-2 Compressor for Fast Multiplier (Special Issue on Ultra-High-Speed LSIs)
• Well Structure by High-Energy Boron Implantation for Soft-Error Reduction in Dynamic Random Access Memories (DRAMs)
• Estimation of Carrier Suppression by High-Energy Boron-Implanted Layer for Soft Error Reduction
• High-Dose Implantation of MeV Carbon Ion into Silicon
• Three-Dimensional Analysis of Locally Implanted Atoms by MeV Helium Ion Microprobe
• Au^+-Ion-Implanted Silica Glass with Non-Linear Optical Property
• Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis : Beam-Induced Physics and Chemistry
• Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis
• Preferentially Oriented Crystal Growth in Dynamic Mixing Process : An Approach by Monte Carlo Simulation
• Focused High-Energy Heavy Ion Beams
• Tomography of Microstructures by Scanning Micro-RBS Probe
• Optimization in Spot Sizes of Focused MeV Ion Beam by Precise Adjustment of Lens-Current Excitations : Nuclear Science, Plasmas and Electric Discharges
• Microstructural Evolution of Fe-Cr-W Model Alloys During Fe^+ Ion Irradiation
• Qualitative Correspondences of Experimentally Obtained Growth Rates and Morphology of Single-Crystal Diamond with Numerical Predictions of Plasma and Gas Dynamics in Microwave Discharges for Various Substrate Holder Shapes
• 23-O-16 Hardness of DLC Deposited by Plasma Based Ion Implantation and Deposition Method Using Mixed RF and Negative High Voltage Pulses
• Fe Deposition or Implantation into Vacuum Arc Deposited Cr Films
• Ion-Beam 3C-SiC Heteroepitaxy on Si
• Neutron Activation Analysis of Ultrahigh-Purity Ti-Al Alloys in Comparison with Glow-Discharge Mass Spectrometry
• Epitaxial Growth of Pure ^Si Thin Films Using Isotopically Purified Ion Beams : Semiconductors
• Neutron Activation Analysis of High-Purity Iron in Comparison with Chemical Analysis
• Silicon Carbide Film Growth Using Dual Isotopical ^Si^- and ^C^+ Ion species
• Formation of High Purity films by Negative Ion Beam Sputtering Using an Ultra-high Vacuum Self-Sputtering Method
• Formation of Ultra High Pure Metal Thin Films by Means of a Dry Process
• Macroparticle-Free Ti-Al Films by Newly Developed Coaxial Vacuum Arc Deposition
• Formation of Crystalline SiC Buried Layer by High-Dose Implantation of MeV Carbon Ions at High Temperature
• Annealing of Se^+-Implanted GaAs Encapsulated with As-Doped a-Si:H
• Operating Conditions to Achieve High Performance in PPCD in a Reversed-Field Pinch Plasma
• Operating Conditions to Achieve High Performance in PPCD in a Reversed-Field Pinch Plasma
• Chemical State and Refractive Index of Mg-Ion-Implanted Silica Glass
• Impact of Body Bias Controlling in Partially Depleted SOI Devices with Hybrid Trench Isolation Technology
• A 90nm-node SOI Technology for RF Applications
• 23-P-06 Nano Crystalline and Smooth Surface Epilayer Formations of 3C-SiC at Low Temperatures Using Energetic Ions
• PREFACE
• Effects of Helium Production and Heat Treatment on Neutron Irradiation Hardening of F82H Steels Irradiated with Neutrons
• Void Formation and Structure Change Induced by Heavy Ion Irradiation in GaSb and InSb
• Effect of Pressure on Mode Transition Point of Reversed Field Pinch Plasma in Partially Relaxed States
• A Single-Chip 2.4-GHz RF Transceiver LSI with a Wide-Input-Range Frequency Discriminator(Special Issue on Silicon RF Device & Integrated Circuit Technologies)
• Effects of Various Alloying Elements on Tensile Properties of High-Purity Fe-18Cr-(14-16)Ni Alloys at Room Temperature
• In situ Transmission Electron Microscopy of Carbide Precipitation in Fe-50% Cr Alloys at Elevated Temperatures
• Diffusion of Cr and Fe in a High-Purity Fe-50mass%Cr-8mass%W Alloy
• Self-Diffusion in High Purity Fe-50 mass% Cr Alloy
• PREFACE
• The First Plasma Rotation Measurement in a Large Reversed-Field Pinch Device,TPE-RX : Fluids, Plasmas, and Electric Discharges
• Metallic Alloy Coatings Using Coaxial Vacuum Arc Deposition
• Deuterium Ice Pellet Injection during Pulsed Poloidal Current Drive Operation in Toroidal Pinch Experiment-RX Reversed-Field Pinch Device
• Quick Focus Adjustment for Quadrupole Lens System to Form High-Energy Ion Microbeam
• Observations of High Ion Temperatures in a Reversed Field Pinch Plasma
• Bolometric Measurement of Reversed Field Pinch Plasma in TPE-1R (M)
• Partially Relaxed Minimum Energy States of Reversed-Field-Pinch Plasma
• Effects of Impurities and Neutrals on Setting-Up Phase of Reversed Field Pinch
• A 10 bit 50 MS/s CMOS D/A Converter with 2.7 V Power Supply (Special Section on Low-Power and Low-Voltage Integrated Circuits)
• Transient Analysis of Switched Current Source
• A Realistic Approach to Improve the Shell Proximity of an RFP Device
• Partially Relaxed States of Plasmas in Two Different Types of Devices
• Control of the Locked Mode in a Reversed-Field Pinch Plasma Using a Rotating Toroidal Field
• Effects of Neutron Irradiation on Tensile Properties in High-Purity Fe-(9-50) Cr and Fe-50Cr-xW Alloys
• Figure of Merit for the Improvement of Confinement in Pulsed Poloidal Current Drive Experiments in Reversed-Field Pinch Devices
• Measurement of Vacuum Vessel Current and its Relation to Locked Mode in a Reversed-field Pinch Device, TPE-RX(Nuclear Science, Plasmas, and Electric Discharges)
• Confinement Improvement in a Single Helical State of' the Reversed Field Pinch Plasma on TPE-1RM20 : Fluids, Plasmas, and Electric Discharges
• Plasma and Mode Rotations in a Reversed-Field Pinch Device, TPE-1RM20
• Outline of a Large Reversed Field Pinch Machine,TPE-RX
• Measurement of Fast Electron Velocity Distribution Function in a Reversed Field Pinch Plasma
• Formation of Defect Structure on Ge Surface by Ion Irradiation at Controlled Substrate Temperature
• Spectrophotometric Determination of Trace Amounts of Boron in High-Purity Iron and Ferroalloy after Chemical Separation
• Determination of Trace Amounts of Carbon in High-Purity Iron by Infrared Absorption after Combustion: Pretreatment of Reaction Accelerator and Ceramic Crucible
• Damage Structures and Mechanical Properties of High-Purity Fe-9Cr Alloys Irradiated by Neutrons
• Ultra-Purification of Electrolytic Iron by Cold-Crucible Induction Melting and Induction-Heating Floating-Zone Melting in Ultra-High Vacuum
• Mechanical Properties of Ultrahigh-Purity Ti-45mol%Al Alloy
• Effect of Tungsten on Mechanical Properties of High-Purity 60mass%Cr-Fe Alloys
• Influence of Purity and Cooling-Rate on the Microstructure of Hot-Forged Pure Irons
• Mechanical Properties of a High-Purity 60 Mass% Cr-Fe Alloy
• High-Temperature Mechanical Properties of a High-Purity Cr-Ni Alloy
• Influence of Purity and Forging Temperature on the Microstructure of High-Purity Iron
• Effect of Aging on the Tensile Properties of High-Purity Fe-50Cr Alloys
• Effect of Grain Size on the Deformation Properties of a High-Purity Fe-50Cr Alloy at 293 and 773K
• Role of Tungsten in the Mechanical Properties of a High-Purity Fe-50mass% Cr Alloy at 293-773K
• Purification of Ti-Al Alloys by Induction-Heating Floating-Zone melting and Cold-Crucible melting in Ultra-High Vacuum
• Positron Trapping Sites Originating from Oxide Interfaces on 4H-SiC C($000\bar{1}$)- and Si(0001)-Faces
• Determination of Trace Amount of Gaseous Elements in Iron and Steel
• Lattice Distortion of GaAsBi Alloy Grown on GaAs by Molecular Beam Epitaxy
• In-situ Observation of Transformation Behavior in High-Purity Fe-Ni Alloys
• Purification of Cobalt, Nickel, and Titanium by Cold-Crucible Induction Melting in Ultrahigh Vacuum
• Role of Carbon and Nitrogen on the Transformation of the σ Phase in Highly Purified Fe-50 mass% Cr Alloys
• Why Do We Study Ultra-High Purity Base Metals?
• Fe Deposition or Implantation into Vacuum Arc Deposited Cr Films

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