Reflectioru High Energy Electron Diffraction Observation of Dynamic Ion Beam Mixing Process in Titanium Nitride Crystal Growth
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概要
- 論文の詳細を見る
The initial stages of TIN crystal growth on Si substrates in the dynamic mixing method were investigated by reflection high-energy electron diffraction (RHEED) in a newly constructed ultrahigh-vacuum apparatus. The Si(001) RHEED pattern disappeared immediately after dynamic ion beam mixing started, and then was replaced by the halo pattern representing amorphous structures. The halo gradually changed to Debye-Scherrer rings representing Ti polycrystal. The results for Si (001) and (111) substrates have confirmed that the TiN crystal is controlled by the arrival ratio, Ti/N. The present RHEED pattern study has, for the first time, revealed an observable influence of the crystallography of Si substrates on TiN crystal growth.
- 社団法人応用物理学会の論文
- 1993-10-15
著者
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Inoue M
Department Of Electrical Engineering Osaka Prefectural Technical College
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Inoue M
Osaka Inst. Technol. Osaka Jpn
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Inoue M
Setsunan Univ. Osaka Jpn
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Min K‐y
Department Of Applied Physics Osaka University
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Inoue Masami
Association Of Super-advanced Electronics Technologies (aset)
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Inoue Masahiko
Department Of Neurology Showa University Fujigaoka Hospital
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Inoue M
Assoc. Super‐advanced Electronics Technol. (aset) Yokohama Jpn
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Inoue M
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Inoue M
Kyoto Univ. Kyoto Jpn
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Inoue Masumi
Department Of Quantum Engineering Nagoya University
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SHIMIZU Ryuichi
Department of Applied Physics, Osaka University
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KIUCHI Masato
Government Industrial Research Institute
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FUJII Kanenaga
Government Industrial Research Institute
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BEAG Young
Department of Applied Physics, Osaka University
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Inoue Masataka
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Inoue M
Advanced Technology R&d Center Mitsubishi Electric Corp.
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MIN Kyung-Youl
Department of Applied Physics, Faculty of Engineering, Osaka University
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Beag Y
Department Of Applied Physics Graduate School Of Engineering Osaka University
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Beag Young
Department Of Applied Physics Osaka University
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Souda R
National Institute For Research In Inorganic Materials
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Kiuchi M
National Inst. Advanced Industrial Sci. And Technol. Osaka Jpn
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Min Kyung-youl
Department Of Applied Physics Osaka University
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Shimizu R
Department Of Information Science Osaka Institute Of Technology
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Shimizu R
Osaka Univ. Osaka Jpn
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Shimizu Ryuichi
Department Of Applied Physics Faculty Of Engineering Osaka University
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Inoue Masahiko
Department Of Applied Physics Faculty Of Engineering Osaka University
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Shimizu Ryuichi
Department Of Applied Physics Faculty Engineering Osaka University
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Shimizu Ryuichi
Department of Information Processing, Osaka Institute of Technology
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