Experimental and Theoretical Study of the Charge Build-Up in an ECR Etcher
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概要
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The charge build-up in an electron cyclotron resonance (ECR) etcher has been studied experimentally and theoretically. The experimental results show that the charge build-up profiles of the wafer are convex and positive, and are detected only when the RF bias exists. We have derived a simplified equivalent circuit model for the wafer in an ECR etcher. The charge build-up profile predicted with the simplified equivalent circuit model shows a good agreement with the experimental results. It is concluded that the variation of plasma potential caused by the radial RF current across the magnetic field results in the charge build-up.
- 社団法人応用物理学会の論文
- 1990-10-20
著者
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Inoue M
Department Of Electrical Engineering Osaka Prefectural Technical College
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Inoue M
Osaka Inst. Technol. Osaka Jpn
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Okada H
Univ. Toyama Toyama Jpn
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Inoue Masami
Association Of Super-advanced Electronics Technologies (aset)
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Inoue Masumi
Department Of Quantum Engineering Nagoya University
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Inoue M
Advanced Technology R&d Center Mitsubishi Electric Corp.
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INOUE Morio
Kyoto Research Laboratory, Matsushita Electronics Corporation
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OKADA Hiroyuki
Kyoto Research Laboratory, Matsushita Electronics Corporation
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Okada H
Faculty Of Engineering University Of Toyama
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Inoue Morio
Kyoto Research Laboratory Matsushita Electronics Corp.
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NAMURA Takashi
Kyoto Research Lab., Matsushita Electronics Corp.
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TODOKORO Yoshihiro
Kyoto Research Lab., Matsushita Electronics Corp.
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Namura T
Kyoto Research Laboratory Matsushita Electronics Corporation
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Todokoro Y
Kyoto Research Laboratory Matsushita Electronics Corporation
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Todokoro Yoshihiro
Kyoto Research Lab. Matsushita Electronics Corporation
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NAITOH Yasushi
VLSI Technokogy Research Lab., Matsushita Electric Industrial Co., Ltd
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Naitoh Yasushi
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Okada Hiroyuki
Kyoto Research Laboratory Matsushita Electronics Corporation
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