Computer Simulation Analysis of the Planar Channeling Effect in Practical Ion Implantation : Semiconductors and Semiconductor Devices

概要

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The planar channeling effect in ion implantation was studied using computer simulation. The simulation code was a modified MARLOWE code which enabled dynamic processes of amorphization due to high-dose ion implantation to be simulated. We simulated the practical implantation of 100 keV Si^+ ions in a 3 inch wafer of GaAs. Since an ion beam scans over a wide area, the angle of incidence of the ion beam changes from point on the wafer and results in considerable deterioration of uniformity in the ion-implanted depth, even though the angle of incidence was chosen so as to prevent the channeling condition from occurring during ion implantation. The result clearly indicates that a marked inhomogeneity in ion implantation takes place in the practical manufacturing processes.
社団法人応用物理学会の論文
1988-03-20