Low Temperature Poly-Si TFT by Lamp Annealing
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概要
- 論文の詳細を見る
We studied the crystallization of a-Si by lamp annealing and the application of these poly-Si to the fabrication of TFTs. We found that the crystalline volume fraction and the grain size are larger for the poly-Si made using CVD a-Si compared with that using conventional PECVD a-Si from the X-ray and UV reflectance measurements. The surface crystalline volume fraction of poly-Si film by lamp annealing is over 80%. Using this poly-Si layer, we have made staggered type TFT on glass plate with field effect mobility of about 8 cm^2/Vs and the threshold voltage of less than 5V.
- 社団法人映像情報メディア学会の論文
- 1992-10-20
著者
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Jang Jin
Department of Physics, Kyunghee University Hoigi-dong
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Kang Hee
Department Of Dermatology Ajou University School Of Medicine
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Yoo Soon
Department Of Physics Kyung Hee University
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Jang Jin
Department Of Physics Kyung Hee University
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Jang Jin
Department Of Biochemistry School Of Medicine Kyungpook National University
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Kang Hee
Department Of Applied Physics Osaka University:department Of Physics Sciences Chungbuk National Univ
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Kang Hee
Department Of Physics Kyung Hee University
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Song Hyun
Department Of Pharmacology College Of Pharmacy Chung Ang University
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Song Hyun
Department Of Internal Medicine Jeju National University School Of Medicine
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Jun Jung
Department of Physics, Kyung Hee University
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Woo Jae
Department of Physics, Kyung Hee University
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Song Hyun
Department Of Cardiovascular Surgery Asan Medical Center University Of Ulsan College Of Medicine
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Song Hyun
Department Of Physics Kyung Hee University
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Woo Jae
Department Of Physics Kyung Hee University
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