PERFORMANCE IMPROVEMENT OF A-SI TFT PRODUCED BY ATMOSPHERIC PRESSURE CVD : TFT TECHNOLOGIES

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概要

• 論文の詳細を見る

• We have studied the performance improvement of atmospheric pressure (AP) CVD a-Si thin film transistors. The N_2 plasma treatment and hydrogenation improve the performance of APCVD a-Si TFT significantly. The ion doped a-Si layer was used to make ohmic contact for the inverse staggered type TFTs. We obtained the field effect mobility of 1.05 cm^2/Vs and the threshold voltage of 6.3V. Therefore, we can increase the production throughput of a-Si TFT arrays by using APCVD a-Si and SiO_2 layers

• 社団法人映像情報メディア学会の論文
• 1993-10-27

著者

• LEE KYUNG

  Department of Pediatrics, The Catholic University of Korea

• Jang Jin

  Department of Physics, Kyunghee University Hoigi-dong

• Ahn Byung

  Anyang Research Lab. Goldstar Co.

• Jang Jin

  Department Of Biochemistry School Of Medicine Kyungpook National University

• Lee Kyung

  Department Of Anesthesia And Pain Medicine Gachon University Of Medicine And Science Gil Medical Cen

• Moon Byeong

  Department Of Herbal Resources Research Korea Institute Of Oriental Medicine

• Moon Byeong

  Department Of Physics Kyung Hee University

• Kim Jung

  Anyang Research Lab. Goldstar Co.

• Kim Donggjl

  Anyang Research Lab., GoldStar Co.

• Lee Choochon

  Anyang Research Lab., GoldStar Co.

• Kim Donggjl

  Anyang Research Lab. Goldstar Co.

• Lee Choochon

  Anyang Research Lab. Goldstar Co.

• Lee Kyung

  Department Of Physics Kyung Hee University

• Lee Kyung

  Department Of Agricultural Chemistry Division Of Applied Life Science Gyeongsang National University

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