Fabrication of Amorphous Silicon TFT by Atmospheric Pressure CVD
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概要
- 論文の詳細を見る
Amorphous silicon TFTS (a-Si TFTs) have been investigated by the atmospheric pressure CVD (APCVD) method using disilane. The deposition rate of a-Si was higher than 15 nm/min at 420 ℃. The field effect mobility and the on/off current ratio were higher than 0.38 cm^2/Vs and 10^4, respectively.
- 社団法人映像情報メディア学会の論文
- 1992-10-20
著者
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Kim Kwang
Department Of Radiology College Of Medicine Seoul National University
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Jang Jin
Department of Physics, Kyunghee University Hoigi-dong
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Kang Hee
Department Of Dermatology Ajou University School Of Medicine
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Yoo Soon
Department Of Physics Kyung Hee University
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Ahn Byung-chul
Anyang Research Laboratory Goldstar Corporation
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Jang Jin
Department Of Physics Kyung Hee University
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Jang Jin
Department Of Biochemistry School Of Medicine Kyungpook National University
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Kang Hee
Department Of Applied Physics Osaka University:department Of Physics Sciences Chungbuk National Univ
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Kang Hee
Department Of Physics Kyung Hee University
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Kim Kwang
Department Of Physics Kyung Hee University
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Kim Kwang
Department Of Anatomy Wonkwang University
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KIM Jeong
Anyang Research Laboratory GoldStar Corporation
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LIM Young-Jin
Anyang Research Laboratory GoldStar Corporation
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KIM Woo
Anyang Research Laboratory GoldStar Corporation
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Kim Jeong
Anyang Research Lab Goldstar Co.
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KIM Kwang
Department of Advanced Materials Engineering (Polymerics Program), Korea Advanced Institute of Science and Technology (KAIST)
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