Fabrication and Estimation of Characteristics for Nb-Silicide FEAs (第5回日韓台中情報ディスプレイ合同研究会(ASID '99)) -- (FED and EL Displays)

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概要

• 論文の詳細を見る

• Electron emission currents and stability in the silicon-tip field emission arrays(FEAs)have bee improved by silicide formation on silicon using Nb(Niobium). The formation of Nb-silicide was confirmed by X-Ray Diffraction(XRD)data. The turn-on voltage of silicon-tip FEAs was decreased from 64 to 47V and the emission current fluctuation was decreased from 5% to 2%.

• 社団法人映像情報メディア学会の論文
• 1999-03-18

著者

• Ju B

  Korea Institute Of Science And Technology

• Ju Byeong

  Division Of Electronics And Information Technology Kist

• Jang Jin

  Department of Physics, Kyunghee University Hoigi-dong

• Park Jae

  Electronics Telecommunications Research Institute

• Jang J

  Kyunghee University

• Oh M

  Korea Institute Of Science And Technology

• Oh M

  Samsung Electronics Kyoungi‐do Kor

• Oh Myung

  Division Of Electronics And Information Technology Kist

• Jang Jin

  Department Of Physics Kyunghee University

• Jang Jin

  Department Of Biochemistry School Of Medicine Kyungpook National University

• Park Jae

  Electronic Materials And Devices Research Center Kist

• Jang J

  Korea Institute Of Science And Technology

• Lee Sanjo

  Electronic Materials and Devices Research Center, KIST

• Ju Byeong

  Electronic Materials and Devices Research Center, KIST

• Jeon D.

  Department of Physics, Myong Ji University

• Oh Myung

  Electronic Materials and Devices Research Center, KIST

• Lee S

  Electronic Materials And Devices Research Center Kist

• Lee Sanjo

  Myong Ji University Department Of Physics

• Jeon D.

  Department Of Physics Myong Ji University

• Le Sanjo

  Electronic Materials and Devices Research Center,KIST

• Jeon D.

  Department of Physics Education, Seoul National University, Seoul 151-747, Korea

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