Atomic Structure of CaF_2/Si(111) Interface and Defect Formation on CaF_2(111) Surface by Electron Irradiation
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概要
- 論文の詳細を見る
Atomic and electronic structures of the CaF_2/Si(111) interface and the desorption mechanism of F from epitaxial CaF_2(111) films produced by electron irradiation have been studied by low-energy ion scattering spectroscopy (ISS) and low-energy electron energy loss spectroscopy (EELS). The interface is formed by the desorption of F and becomes metallic. The F at the surface of epitaxial CaF_2(111) films desorbs by electron irradiation, and the surface after F-desorption becomes metallic. The metallic surface reverts to the bulk electronic state before electron irradiation by annealing at about 400℃.
- 社団法人応用物理学会の論文
- 1991-04-15
著者
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ISHIZAWA Yoshio
National Institute for Research in Inorganic Materials
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AIZAWA Takashi
National Institute for Materials Science, Advanced Materials Laboratory
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Ishizawa Yoshio
National Institute For Research In Inorganec Materials
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Ishizawa Yoshio
Institute Of Geoscience The University Of Tsukuba
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Isizawa Yoshio
National Institute For Research In Inorganic Materials
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Ishizawa Yoshio
National Institute For Research Inorganic Materials
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SOUDA Ryutaro
National Institute for Research in Inorganic Materials
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OSHIMA Chuhei
National Institute for Research in Inorganic Materials
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Miura Kouji
Department Of Physics Aichi University Of Education
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Souda R
National Institute For Research In Inorganic Materials
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Oshima Chuhei
Department Of Applied Physics Waseda University:presto Structure And Function Properties Jrdc
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Aizawa Takashi
National Institute For Research In Inorganic Materials
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Shimizu R
Department Of Information Science Osaka Institute Of Technology
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Shimizu R
Osaka Univ. Osaka Jpn
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Ishizawa Y
National Institute For Research In Inorganic Materials
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SUGIURA Kazuhiko
Department of Physics, Aichi University of Education
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OSHIMA Chuhei
Faculty of Science and Engineering, Waseda University
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Souda Ryutaro
National Institute For Materials Research
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Sugiura Kazuhiko
Department Of Physics Aichi University Of Education
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Shimizu Ryuichi
Department of Information Processing, Osaka Institute of Technology
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