Ga Polarity Preference in Halide Vapor Phase Epitaxy of GaN on a GaAs (111)B: As Polar Substrate : Semiconductors
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概要
- 論文の詳細を見る
- 2001-12-15
著者
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SOUDA Ryutaro
National Institute for Research in Inorganic Materials
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Souda Ryutaro
Advanced Materials Laboratory National Institute For Materials Science
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HASEGAWA Fumio
University of Tsukuba, Institute of Applied Physics
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NAMERIKAWA Makoto
University of Tsukuba, Institute of Applied Physics
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TAKAHASHI Osamu
University of Tsukuba, Institute of Applied Physics
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SATO Tomonari
University of Tsukuba, Institute of Applied Physics
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Hasegawa Fumio
University Of Tsukuba Institute Of Applied Physics
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Sato T
University Of Tsukuba Institute Of Applied Physics
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Souda Ryutaro
National Institute For Materials Research
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Namerikawa Makoto
University Of Tsukuba Institute Of Applied Physics
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Takahashi Osamu
University Of Tsukuba Institute Of Applied Physics
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- Ga Polarity Preference in Halide Vapor Phase Epitaxy of GaN on a GaAs (111)B: As Polar Substrate : Semiconductors
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