Dielectric Properties of (Ba_xSr_<1-x>)TiO_3 Thin Films Prepared by RF Sputtering for Dynamic Random Access Memory Application (<Special Issue> FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-09-30
著者
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Makita T
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Makita Tetsuro
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Mikami N
Tohoku Univ. Sendai Jpn
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Mikami Noboru
Semiconductor Research Laboratory
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Tanimura J
Mitsubishi Electric Corp. Hyogo Jpn
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Horikawa Tsuyoshi
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
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Sato Kazunao
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
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Kuroiwa T
R&d Assoc. Future Electron Devices Tokyo Jpn
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Tanimura Junji
Materials And Electronic Devices Laboratory Mitsubishi Electric Corporation
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Sato K
Ntt Network Innovation Laboratories
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KUROIWA Takeharu
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
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TSUNEMINE Yoshikazu
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
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TANIMURA Jyunji
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation
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Tsunemine Yoshikazu
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Sato K
Ykc Corp. Musashimurayama‐shi Jpn
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Mikami N
Mitsubishi Electric Corp. Hyogo Jpn
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Horikawa Tsuyoshi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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