Horikawa Tsuyoshi | Semiconductor Research Laboratory, Mitsubishi Electric Corporation
スポンサーリンク
概要
関連著者
-
Makita T
Semiconductor Research Laboratory Mitsubishi Electric Corporation
-
Makita Tetsuro
Semiconductor Research Laboratory Mitsubishi Electric Corporation
-
Mikami N
Tohoku Univ. Sendai Jpn
-
Mikami Noboru
Semiconductor Research Laboratory
-
Horikawa Tsuyoshi
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
-
Mikami N
Mitsubishi Electric Corp. Hyogo Jpn
-
Horikawa Tsuyoshi
Advanced Technology R&d Center Mitsubishi Electric Corporation
-
Sato Kazunao
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
-
Kuroiwa T
R&d Assoc. Future Electron Devices Tokyo Jpn
-
Sato K
Ntt Network Innovation Laboratories
-
KUROIWA Takeharu
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
-
Sato K
Ykc Corp. Musashimurayama‐shi Jpn
-
Tanimura J
Mitsubishi Electric Corp. Hyogo Jpn
-
Ohno Y
Mitsubishi Electric Corp. Hyogo Jpn
-
Ohno Yoshikazu
Ulsi Laboratory Mitsubishi Electric Corporation
-
Ito Hiromi
ULSI Laboratory, Mitsubishi Electric Corporation
-
Tanimura Junji
Materials And Electronic Devices Laboratory Mitsubishi Electric Corporation
-
TSUNEMINE Yoshikazu
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
-
TANIMURA Jyunji
Materials & Electronic Devices Laboratory, Mitsubishi Electric Corporation
-
Tsunemine Yoshikazu
Semiconductor Research Laboratory Mitsubishi Electric Corporation
-
Ito Hiromi
Ulsi Laboratory Mitsubishi Electric Corporation
著作論文
- (Ba_<0.75>Sr_<0.25>)TiO_3 Films for 256 Mbit DRAM (Special Issue on Quarter Micron Si Device and Process Technologies)
- Dielectric Relaxation of (Ba, Sr)TiO_3 Thin Films
- Dielectric Properties of (Ba_xSr_)TiO_3 Thin Films Prepared by RF Sputtering for Dynamic Random Access Memory Application ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)