Ni-Salicided Poly-Si/poly-SiGe-Layered Gate Technology for 65-nm-node CMOSFETs
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概要
- 論文の詳細を見る
A poly-Si/poly-SiGe-layered gate electrode with a high Ge content that is suitable for Ni silicidation has been examined. The optimum Ge content for suppressing gate depletion was found to be 30%. It was found that the in situ deposition of a thin Si layer after SiGe deposition was effective in suppressing void formation. A smooth Si0.7Ge0.3 film without voids was obtained as either polycrystalline or amorphous. The enhancement of boron activation in poly-Si0.7Ge0.3 was confirmed while gate depletion became large for $\alpha$-Si0.7Ge0.3 because of its lower boron diffusivity. Stable Ni silicidation over the 300 mm wafers was achieved by using a poly-Si/poly-Si0.7Ge0.3-layered gate electrode.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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Muto Akiyoshi
Research Department 1 Semiconductor Leading Edge Technologies Inc. (selete)
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Maeda Takeshi
Research Department 1 Semiconductor Leading Edge Technologies Inc. (selete)
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Ohji Hiroshi
Research Department 1 Semiconductor Leading Edge Technologies Inc. (selete)
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TORII Kazuyoshi
Research Department 1, Semiconductor Leading Edge Technologies, Inc. (SELETE)
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Kitajima Hiroshi
Research Dept. 1 Semiconductor Leading Edge Technologies (selete) Inc.
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Ohji Hiroshi
Research Department 1, Semiconductor Leading Edge Technologies, Inc. (SELETE), 34 Miyukigaoka, Tsukuba-shi, Ibaraki-ken 305-8501, Japan
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Maeda Takeshi
Research Department 1, Semiconductor Leading Edge Technologies, Inc. (SELETE), 34 Miyukigaoka, Tsukuba-shi, Ibaraki-ken 305-8501, Japan
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Muto Akiyoshi
Research Department 1, Semiconductor Leading Edge Technologies, Inc. (SELETE), 34 Miyukigaoka, Tsukuba-shi, Ibaraki-ken 305-8501, Japan
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Kitajima Hiroshi
Research Department 1, Semiconductor Leading Edge Technologies, Inc. (SELETE), 34 Miyukigaoka, Tsukuba-shi, Ibaraki-ken 305-8501, Japan
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Torii Kazuyoshi
Research Department 1, Semiconductor Leading Edge Technologies, Inc. (SELETE), 34 Miyukigaoka, Tsukuba-shi, Ibaraki-ken 305-8501, Japan
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