Kitajima Hiroshi | Research Department 1, Semiconductor Leading Edge Technologies, Inc. (SELETE), 34 Miyukigaoka, Tsukuba-shi, Ibaraki-ken 305-8501, Japan
スポンサーリンク
概要
- Kitajima Hiroshiの詳細を見る
- 同名の論文著者
- Research Department 1, Semiconductor Leading Edge Technologies, Inc. (SELETE), 34 Miyukigaoka, Tsukuba-shi, Ibaraki-ken 305-8501, Japanの論文著者
関連著者
-
Kitajima Hiroshi
Research Dept. 1 Semiconductor Leading Edge Technologies (selete) Inc.
-
Kitajima Hiroshi
Research Department 1, Semiconductor Leading Edge Technologies, Inc. (SELETE), 34 Miyukigaoka, Tsukuba-shi, Ibaraki-ken 305-8501, Japan
-
Muto Akiyoshi
Research Department 1 Semiconductor Leading Edge Technologies Inc. (selete)
-
Kamiyama Satoshi
Research Dept. 1 Semiconductor Leading Edge Technologies (selete) Inc.
-
Miura Takayoshi
Research Dept. 1 Semiconductor Leading Edge Technologies (selete) Inc.
-
Maeda Takeshi
Research Department 1 Semiconductor Leading Edge Technologies Inc. (selete)
-
Ohji Hiroshi
Research Department 1 Semiconductor Leading Edge Technologies Inc. (selete)
-
AOYAMA Tomonori
Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc.
-
KITAJIMA Hiroshi
Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc.
-
ARIKADO Tsunetoshi
Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc.
-
TORII Kazuyoshi
Research Department 1, Semiconductor Leading Edge Technologies, Inc. (SELETE)
-
Arikado Tsunetoshi
Research Dept. 1 Semiconductor Leading Edge Technologies (selete) Inc.
-
Aoyama Tomonori
Research Dept. 1 Semiconductor Leading Edge Technologies (selete) Inc.
-
Ohji Hiroshi
Research Department 1, Semiconductor Leading Edge Technologies, Inc. (SELETE), 34 Miyukigaoka, Tsukuba-shi, Ibaraki-ken 305-8501, Japan
-
Maeda Takeshi
Research Department 1, Semiconductor Leading Edge Technologies, Inc. (SELETE), 34 Miyukigaoka, Tsukuba-shi, Ibaraki-ken 305-8501, Japan
-
Muto Akiyoshi
Research Department 1, Semiconductor Leading Edge Technologies, Inc. (SELETE), 34 Miyukigaoka, Tsukuba-shi, Ibaraki-ken 305-8501, Japan
-
Torii Kazuyoshi
Research Department 1, Semiconductor Leading Edge Technologies, Inc. (SELETE), 34 Miyukigaoka, Tsukuba-shi, Ibaraki-ken 305-8501, Japan
著作論文
- High Quality Hf-Silicate Gate Dielectrics Fabrication by Atomic Layer Deposition (ALD) Technology
- Ni-Salicided Poly-Si/poly-SiGe-Layered Gate Technology for 65-nm-node CMOSFETs