Physical and Electrical Properties of HfAlO_x Films Prepared by Atomic Layer Deposition Using NH_3/Ar Plasma
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-11-30
著者
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Kim Woo
Semiconductor Leading Edge Technologies Inc.
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Kim W
Pohang Univ. Sci. And Technol. Pohang Kor
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Muto Akiyoshi
Research Department 1 Semiconductor Leading Edge Technologies Inc. (selete)
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Muto Akiyoshi
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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TORII Kazuyoshi
Semiconductor Leading Edge Technologies, Inc.
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ITO Hiroyuki
Semiconductor Leading Edge Technologies, Inc.
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KAWAHARA Takaaki
Semiconductor Leading Edge Technologies, Inc.
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MUTO Akiyoshi
Semiconductor Leading Edge Technologies, Inc.
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KITAJIMA Hiroshi
Semiconductor Leading Edge Technologies, Inc.
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OHJI Hiroshi
Semiconductor Leading Edge Technologies, Inc. (Selete)
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MITSUHASHI Riichirou
Semiconductor Leading Edge Technologies, Inc. (Selete)
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KIM Woosik
Semiconductor Leading Edge Technologies, Inc. (Selete)
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