TiN/TiSi_2 Formatiorn Using TiN_x Layer and Its Feasibilities in ULSI
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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Kim Woo
Semiconductor Leading Edge Technologies Inc.
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Byun Jeon
Semiconductor Research Laboratory Of Goldstar Electron Co. Ltd.
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Kim Woo
Semiconductor Research Laboratory Of Goldstar Electron Co. Ltd.
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Kim Jae
Semiconductor Research Laboratory Of Goldstar Electron Co. Ltd.
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Kim Chan
Semiconductor Research Laboratory of GoldStar Electron Co., Ltd.
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Rha Kwan
Semiconductor Research Laboratory of GoldStar Electron Co., Ltd.
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Rha Kwan
Semiconductor Research Laboratory Of Goldstar Electron Co. Ltd.
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Kim Chan
Semiconductor Research Laboratory Of Goldstar Electron Co. Ltd.
関連論文
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- Thermal Instability of Poly-Si Gate Al_2O_3 MOSFETs
- TiN/TiSi_2 Formatiorn Using TiN_x Layer and Its Feasibilities in ULSI