KIM Woosik | Semiconductor Leading Edge Technologies, Inc. (Selete)
スポンサーリンク
概要
関連著者
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ITO Hiroyuki
Semiconductor Leading Edge Technologies, Inc.
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KIM Woosik
Semiconductor Leading Edge Technologies, Inc. (Selete)
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Kim Woo
Semiconductor Leading Edge Technologies Inc.
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Kim W
Pohang Univ. Sci. And Technol. Pohang Kor
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Muto Akiyoshi
Research Department 1 Semiconductor Leading Edge Technologies Inc. (selete)
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Muto Akiyoshi
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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TORII Kazuyoshi
Semiconductor Leading Edge Technologies, Inc.
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KAWAHARA Takaaki
Semiconductor Leading Edge Technologies, Inc.
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MUTO Akiyoshi
Semiconductor Leading Edge Technologies, Inc.
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KITAJIMA Hiroshi
Semiconductor Leading Edge Technologies, Inc.
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OHJI Hiroshi
Semiconductor Leading Edge Technologies, Inc. (Selete)
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MITSUHASHI Riichirou
Semiconductor Leading Edge Technologies, Inc. (Selete)
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
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Mitsuhashi Riichirou
Semiconductor Leading Edge Technologies Inc.
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Ohji Hiroshi
Semiconductor Leading Edge Technologies
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Muto Akiyoshi
Semiconductor Leading Edge Technologies Inc.
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Kawahara Takaaki
Semiconductor Leading Edge Technologies Inc.
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies Inc.
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Ohji Hiroshi
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Mitsuhashi Riichirou
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Muto Akiyoshi
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Ito Hiroyuki
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies
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KAWAHARA Takaaki
Semiconductor Leading Edge Technologies
著作論文
- Physical and Electrical Properties of HfAlO_x Films Prepared by Atomic Layer Deposition Using NH_3/Ar Plasma
- Physical and Electrical Properties of HfAlOx Films Prepared by Atomic Layer Deposition Using NH3/Ar Plasma