Formation of Silicon Oxynitride Films with High Nitrogen Concentration at Low Temperatures
スポンサーリンク
概要
- 論文の詳細を見る
- 1998-09-07
著者
-
KOBAYASHI Hikaru
Institute of Scientific and Industrial Research, Osaka University
-
Mizokuro Toshiko
Institute Of Scientific And Industrial Research Osaka University
-
Yoneda Kenji
Ulsi Process Technology Development Center Matsushita Electronics Corporation
-
TODOKORO Yoshihiro
Corporate Planning Department, Matsushita Electronics Corporation
-
Todokoro Yoshihiro
Corporate Planning Department Matsushita Electronics Corporation
-
Kobayashi Hikaru
Institute Of Scientific And Industrial Research Osaka University
-
TODOKORO Yoshihiro
Research Planning Department, Corporate Research Division, Matsushita Electric Industrial Co., Ltd.
関連論文
- SiC/SiO_2 Structure Formed at 〜200℃ by Heat Treatment at 950℃ Having Excellent Electrical Characteristics
- SiC/SiO_2 Structure Formed at -200℃ with Excellent Electrical Characteristics
- A Highly Reliable MIM Technology with non-Crystallized HfOx Dielectrics Using Novel MOCVD Stacked TiN Bottom Electrodes
- Surface Preparation, Growth, and Interface Control of Ultrathin Gate Oxides
- Crown-Ether Cyanide Treatment to Eliminate Interface States at Si/SiO_2 Interfaces
- Formation of Silicon Oxynitride Films with High Nitrogen Concentration at Low Temperatures
- Interface States for Silicon Oxide Layers Formed by Use of Catalytic Activity of a Platinuim Layer
- Ferroelectric Bi_4Ti_3O_ Films on Si(100) with An Ultrathin Buffer Layer of Silicoll Oxynitride: A Comparative Study Using X-Ray Photoelectron Spectroscopy
- A Role of Ultra Thin Silicon Interlayer in Au/Si/n-GaAs Contacts : Depinning of the GaAs Surface