A Highly Reliable MIM Technology with non-Crystallized HfOx Dielectrics Using Novel MOCVD Stacked TiN Bottom Electrodes
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Ichimura Hideo
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
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OHTSUKA Takashi
The Engineering Department, Panasonic Semiconductor Engineering Co., Ltd.
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SHIBATA Yoshiyuki
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co
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ARAI Hideyuki
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co
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MATSUYAMA Seiji
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co
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UCHIYAMA Keita
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co
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SUZUKI Jun
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co
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TSUZUMITANI Akihiko
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co
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YONEDA Kenji
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co
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HASHIMOTO Yukiko
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co
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NAKABAYASHI Takashi
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co
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FUJII Eiji
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co
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Fujii Eiji
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
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Yoneda Kenji
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Yoneda Kenji
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
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Arai Hideyuki
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
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Uchiyama Keita
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
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Matsuyama Seiji
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
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Hashimoto Yukiko
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
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Nakabayashi Takashi
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
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Shibata Yoshiyuki
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
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Tsuzumitani Akihiko
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
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Ohtsuka Takashi
The Engineering Department Panasonic Semiconductor Engineering Co. Ltd.
関連論文
- A Highly Reliable MIM Technology with non-Crystallized HfOx Dielectrics Using Novel MOCVD Stacked TiN Bottom Electrodes
- Pt/Ba_xSr_TiO_3/Pt Capacitor Technology for 0.15μm Embedded Dynamic Random Access Memory
- Low Temperature BST-CVD Process for the Concave-Type Capacitors Designed for Logic-Base-Embedded DRAMs
- Extendibility of Ta_2O_5 Metal-Insulator-Metal Capacitor Using Ru Electrode
- Ru-Ta_2O_5MIM Capacitor toward 0.1μm DRAM Cell
- Crown-Ether Cyanide Treatment to Eliminate Interface States at Si/SiO_2 Interfaces
- Formation of Silicon Oxynitride Films with High Nitrogen Concentration at Low Temperatures
- Interface States for Silicon Oxide Layers Formed by Use of Catalytic Activity of a Platinuim Layer
- Pt/BaxSr(1-x)TiO3/Pt Capacitor Technology for 0.15 μm Embedded Dynamic Random Access Memory
- Extendibility of Ta2O5 Metal-Insulator-Metal Capacitor Using Ru Electrode