Interface States for Silicon Oxide Layers Formed by Use of Catalytic Activity of a Platinuim Layer
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概要
- 論文の詳細を見る
- 1998-09-07
著者
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KOBAYASHI Hikaru
Institute of Scientific and Industrial Research, Osaka University
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Yoneda Kenji
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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TODOKORO Yoshihiro
Corporate Planning Department, Matsushita Electronics Corporation
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Todokoro Yoshihiro
Corporate Planning Department Matsushita Electronics Corporation
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Kobayashi Hikaru
Institute Of Scientific And Industrial Research Osaka University
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TODOKORO Yoshihiro
Research Planning Department, Corporate Research Division, Matsushita Electric Industrial Co., Ltd.
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YUASA Toshiro
Institute of Scientific and Industrial Research, Osaka University
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YAMANAKA Kazuhiro
Institute of Scientific and Industrial Research, Osaka University
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Yamanaka Kazuhiro
Institute Of Scientific And Industrial Research Osaka University
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Yuasa Toshiro
Institute Of Scientific And Industrial Research Osaka University
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