Interfacial Layer in Thermally-grown Ultra thin Silicon Dioxides Measured by Grazing Incidence X-Ray Reflection
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-11-15
著者
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Nishioka Yasushiro
Texas Instruments Tsukuba R & D Center
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Nishioka Yasushiro
Tsukuba Research And Development Center Japan Texas Instruments
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松村 正清
東京工業大学工学部:(現)(株)液晶先端技術開発センター
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Sakoda Tatsuya
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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MATSUMURA Mieko
Texas Instruments Tsukuba R & D Center
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SAKODA Tomoyuki
Texas Instruments Tsukuba R & D Center
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松村 正清
東京工業大学工学部電子物理科
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Nishioka Yasushiro
Texas Instruments Japan Limited Tsukuba Research And Development Center
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Sakoda T
National College Of Technology
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Nishioka Y
Tsukuba Research And Development Center Japan Texas Instruments
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Sakoda Tadanori
Department Of Electronics And Control Engineering Kitakyushu National College Of Technology
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Sakoda Tomoyuki
Si Technology Development Texas Instruments Inc.
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Sakoda Tomoyuki
National College of Technology
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