Extraction of the Capacitance of a Metal Oxide Semiconductor Tunnel Diode (MOSTD) Biased in Accumulation

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概要

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• We present a method to extract the capacitance of a metal oxide semiconductor tunnel diode (MOSTD) biased in accumulation which has been undeterminable by the conventional capacitance-voltage method. An MOSTD is modeled by a parallel pair of a capacitor and a resistor describing the oxide in series with another resistor associated with the substrate. All the three equivalent circuit elements are then extractable by evaluating the impedance spectra of the MOSTD "only" at the characteristic frequency where the magnitude of the imaginary part of the impedance reaches the maximum. The effectiveness of the method is demonstrated with the MOSTDs with 2.5 nm thick oxides.

• 社団法人応用物理学会の論文
• 1999-08-01

著者

• MATSUMURA Mieko

  Texas Instruments Tsukuba R & D Center

• Hirose Yutaka

  Texas Instruments Tsukuba Research And Development Center Ltd.

関連論文

• Interfacial Layer in Thermally-grown Ultra thin Silicon Dioxides Measured by Grazing Incidence X-Ray Reflection
• Surface Preparation, Growth, and Interface Control of Ultrathin Gate Oxides
• Negative-Capacitance Effect in Forward-Biased Metal Oxide Semiconductor Tunnel Diodes(MOSTD)
• Extraction of the Capacitance of a Metal Oxide Semiconductor Tunnel Diode (MOSTD) Biased in Accumulation

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