Negative-Capacitance Effect in Forward-Biased Metal Oxide Semiconductor Tunnel Diodes(MOSTD)
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概要
- 論文の詳細を見る
A negative capacitance(NC)effect in metal oxide semiconductor tunnel diodes(MOSTD)is reported. The phenomenon is observed with forward-biased minority carrier type MOSTDs with low measurement frequencies. Enhancements of the effect with the higher substrate resistivity and with the increase of the minority carrier injection indicate that the effect arises from conductivity modulation in the substrate. The equivalent circuit consisting of a parallel "inductor" -resistor pair in series with the ordinary equivalent circuit of a MOSTD biased in accumulation is found to be a good first order representation of the measured impedance spectra.
- 社団法人応用物理学会の論文
- 2000-02-15
著者
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MATSUMURA Mieko
Texas Instruments Tsukuba R & D Center
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Hirose Yutaka
Texas Instruments Tsukuba Research And Development Center Ltd.
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MATSUMURA Mieko
Texas Instruments Tsukuba Research and Development Center, Ltd.
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HIROSE Yutaka
Texas Instruments Tsukuba Research and Development Center, Ltd.
関連論文
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- Surface Preparation, Growth, and Interface Control of Ultrathin Gate Oxides
- Negative-Capacitance Effect in Forward-Biased Metal Oxide Semiconductor Tunnel Diodes(MOSTD)
- Extraction of the Capacitance of a Metal Oxide Semiconductor Tunnel Diode (MOSTD) Biased in Accumulation