Control of Grain Structure of Sputtering Lead-Zirconate-Titanate Thin Film Using Amorphous Lead-Titanate Buffer Layer
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概要
- 論文の詳細を見る
Crystalline lead-zirconate-titanate (PZT) films of perovskite structure with fine grains were successfully obtained on Ir substrates using an amorphous lead-titanate (a-PTO) butter layer. The grain size of PZT ranged from 100 to 150 nm. The results of the temperature dependence of the X-ray diffraction patterns of PZT films prepared on a-PTO buffer layer revealed that PZT films with a single perovskite phase were obtained at 500℃. In addition, 250-nm-thick PZT films fabricated with a-PTO buffer layer and crystallized at 600℃ showed excellent ferroelectric properties. The 2P_r values of Ir/PZT/IF capacitors with a-PTO buffer layer satisfactorily saturated at the applied voltage of 3.5 V. No degradation in the polarization density was observed for switching cycles up to 1 × 10^9
- 社団法人応用物理学会の論文
- 1999-09-15
著者
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Sakoda Tatsuya
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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Aoki K
Texas Instruments Japan Ltd. Ibaraki Jpn
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Fukuda Yukio
Texas Instruments Tukuba Research & Development Center Limited
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Fukuda Y
Ntt Optoelectronics Laboratories
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Fukuda Yukio
Tsukuba Research And Development Center Texas Instruments Japan Limited
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Aoki K
Toshiba Corp. Yokohama Jpn
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Sakoda T
National College Of Technology
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Fukuda Yuji
Kansai Photon Science Institute Japan Atomic Energy Agency
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Sakoda Tadanori
Department Of Electronics And Control Engineering Kitakyushu National College Of Technology
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Sakoda Tomoyuki
Si Technology Development Texas Instruments Inc.
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Sakoda Tomoyuki
Advanced Materials & Chracterization, Texas Instruments Tsukuba Research ↦ Development Center Lt
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Aoki Katsuhiro
Advanced Materials & Chracterization, Texas Instruments Tsukuba Research ↦ Development Center Lt
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Fukuda Yukio
Advanced Materials & Chracterization, Texas Instruments Tsukuba Research ↦ Development Center Lt
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Fukuda Yuji
JAEA
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Sakoda Tomoyuki
National College of Technology
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