Dielectric Properties of (Ba, Sr)TiO_3 Thin Films and their Correlation with Oxygen Vacancy Density
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概要
- 論文の詳細を見る
This paper describes the dielectric properties of (Ba, Sr)TiO_3 (BST) thin films deposited by rf magnetron sputtering, focusing on their correlation with the oxygen vacancy density in the films. The dielectric properties specific to the BST films can be explained by considering the influence of the dielectric relaxation phenomenon following a power law dependence on time in the time-domain measurement and on frequency in frequencydomain measurement. From an electrical comparison of the films with and without post-annealing in oxygen ambient, it is derived that charging/discharging electrons at oxygen vacancies in the interfacial Schottky depletion layer, whose width is modulated by the applied voltage, are responsible for the observed dielectric properties. Preliminary results of the oxygen vacancy density measurement using a gas-solid oxygen isotopic exchange reaction showed that the higher the post-annealing temperature, the lower the oxygen vacancy density.
- 社団法人応用物理学会の論文
- 1997-11-15
著者
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Fukuda Y
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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Fukuda Y
Department Of Physics Faculty Of Science Kobe University
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Fukuda Yukio
Texas Instruments Tukuba Research & Development Center Limited
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SAKAGUCHI Isao
National Institute for Materials Science
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Kakimi A
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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HANEDA Hajime
Sensor Materials Center, National Institute for Materials Science
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HANEDA Hajime
National Institute for Materials Science
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AOKI Katsuhiro
Texas Instruments Tsukuba Research and Development Center, Limited
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Numata K
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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Haneda Hajime
National Institute For Research In Inorganic Materials
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Haneda Hajime
National Institute For Material Science
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Haneda Hajime
Advanced Materials Laboratory National Institute For Materials Science (nims)
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Aoki Katsuhiro
Texas Instruments Tsukuba Research & Development Center Limited
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Sakaguchi I
Optical Materials Center National Inst. For Materials Sci.
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Sakaguchi Isao
National Inst. Materials Sci. Ibaraki Jpn
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Nishimura Akitoshi
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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NUMATA Ken
Texas Instruments Japan, ULSI Technology Center
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NISHIMURA Akitoshi
Texas Instruments Japan, ULSI Technology Center
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Fukuda Yukio
Texas Instruments Tsukuba Research & Development Center Limited
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