Development of Combinatorial Ion Implantation System
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概要
- 論文の詳細を見る
A combinatorial ion implantation system that can carry out continuous dose variation on a sample has been developed. The system is realized by modifying a conventional electrostatic scanning implanter. A digital wave generator and a digital scanning voltage source are used for the modification. The validity of this system is demonstrated by measuring the depth profile and sheet resistance of boron-implanted layers on a silicon substrate.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-09-15
著者
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Haneda Hajime
National Institute For Material Science
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Sakaguchi Isao
National Inst. Materials Sci. Ibaraki Jpn
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SATO Yoshiyuki
NTT Advanced Technology Corporation
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Suzuki Mineharu
Ntt Advanced Technology Corporation
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Haneda Hajime
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Suzuki Mineharu
NTT Advanced Technology Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Sakaguchi Isao
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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