Study of Optical Property in ZnO Thin Film Implanted with Eu by Combinatorial Ion Implantation Techniques
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概要
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Combinatorial ion implantation techniques with mask and digital scanning systems were applied to optimize conditions of the optimal Eu dose for the orange luminescence originating from Eu phosphor in ZnO thin films. Eu ions accelerated to 150 keV were implanted continuously in the range of $1\times 10^{16}$ to $2\times 10^{17}$ ions/cm2. The sample was annealed at 600°C for 10 min in air, in order to observe the orange luminescence at 618 nm. Optimal Eu dose was determined to be about $1\times 10^{17}$ ions/cm2. The luminescence intensity related to Eu3+ was decreased by the annealing at 800°C. The intensity of orange luminescence is related to the degree of recovery from radiation damage.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-09-10
著者
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OHASHI Naoki
National Institute for Material Science
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Haneda Hajime
National Institute For Material Science
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Sakaguchi Isao
National Inst. Materials Sci. Ibaraki Jpn
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RYOKEN Haruki
National Institute for Materials Science
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SATO Yoshiyuki
NTT Advanced Technology Corporation
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HISHITA Syunichi
National Institute for Materials Science
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Hishita Syunichi
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Ryoken Haruki
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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