Study of Optical Properties of Zinc Oxide Thin Film Implanted with Nitrogen by Combinatorial Ion Implantation Techniques

概要

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Combinatorial ion implantation techniques with mask and digital scanning systems were applied to study the effect of nitrogen on the optical property of ZnO thin films deposited by chemical vapor deposition. Nitrogen ions accelerated to 70 keV were implanted continuously in the range of $1\times 10^{14}$ to $6\times 10^{15}$ ions/cm2. After the annealing at 800 °C for 90 min, photoluminescence measurements revealed that the position of the peak of maximum intensity in the spectrum shifted from 528.0 to 560.4 nm as the N dose was changed from $1\times 10^{14}$ to $6\times 10^{15}$ ions/cm2. The behavior of visible emissions is discussed in terms of the effect of nitrogen ion implantation.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-09-15