Fukuda Yukio | Texas Instruments Tsukuba Research & Development Center Limited
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概要
関連著者
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Fukuda Yukio
Texas Instruments Tukuba Research & Development Center Limited
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AOKI Katsuhiro
Texas Instruments Tsukuba Research and Development Center, Limited
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Aoki Katsuhiro
Texas Instruments Tsukuba Research & Development Center Limited
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Fukuda Yukio
Texas Instruments Tsukuba Research & Development Center Limited
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Aoki K
Texas Instruments Japan Ltd. Ibaraki Jpn
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Fukuda Y
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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Fukuda Y
Department Of Physics Faculty Of Science Kobe University
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Fukuda Y
Ntt Optoelectronics Laboratories
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Fukuda Yukio
Tsukuba Research And Development Center Texas Instruments Japan Limited
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Kakimi A
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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Aoki K
Toshiba Corp. Yokohama Jpn
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Nishimura Akitoshi
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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Sakoda Tatsuya
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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SAKODA Tomoyuki
Texas Instruments Tsukuba R & D Center
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Numata K
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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Sakoda T
National College Of Technology
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Fukuda Yuji
Kansai Photon Science Institute Japan Atomic Energy Agency
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Sakoda Tadanori
Department Of Electronics And Control Engineering Kitakyushu National College Of Technology
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Fukuda Yuji
JAEA
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NUMATA Ken
Texas Instruments Japan, ULSI Technology Center
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NISHIMURA Akitoshi
Texas Instruments Japan, ULSI Technology Center
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NISHIMURA Akitoshi
Memory Research and Development Center, Texas Instruments Incorporated
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Sakoda Tomoyuki
Si Technology Development Texas Instruments Inc.
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Sakoda Tomoyuki
National College of Technology
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TSUKAMOTO Takeyo
Department of Applied Physics, Tokyo University of Science
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Nemoto Satoru
Texas Instruments Tsukuba Research And Development Center Limited
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SAKAGUCHI Isao
National Institute for Materials Science
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Okuno Yasutoshi
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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HANEDA Hajime
Sensor Materials Center, National Institute for Materials Science
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OKAMURA Soichiro
Department of Applied Physics, Tokyo University of Science
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Okamura S
Nara Inst. Sci. And Technol. (naist) Nara Jpn
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Okamura Soichiro
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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HANEDA Hajime
National Institute for Materials Science
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OIZUMI Munenori
Texas Instruments Tsukuba Research and Development Center, Limited
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HASHIMOTO Satoshi
Texas Instruments Tsukuba Research and Development Center, Limited
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Tsukamoto Takeyo
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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Okuno Y
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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Tsukamoto T
Department Of Applied Physics Tokyo University Of Science
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Tsukamoto T
Toshiba Corp. Kawasaki Jpn
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Haneda Hajime
National Institute For Research In Inorganic Materials
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Haneda Hajime
National Institute For Material Science
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Haneda Hajime
Advanced Materials Laboratory National Institute For Materials Science (nims)
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Aoki Katsuhiro
Texas Instruments Tsukuba Research & Development Center Ltd.
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Sakaguchi I
Optical Materials Center National Inst. For Materials Sci.
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Sakaguchi Isao
National Inst. Materials Sci. Ibaraki Jpn
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ANDO Shizutoshi
Department of Electrical Engineering, Faculty of Engineering, Science University of Tokyo
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OKUNO Yasutoshi
Texas Instruments Japan, ULSI Technology Center
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NUMATA Ken
Memory Research and Development Center, Texas Instruments Incorporated
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FUJIHASHI Gaku
Department of Applied Physics, Faculty of Science, Science University of Tokyo
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奥野 泰利
日本テキサスインスツルメンツ(株)、ulsi技術開発センター
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奥野 泰利
松下電器産業(株)
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Fujihashi Gaku
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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MURAYAMA Ikuko
Memory Research & Development Center, Texas Instruments, Inc.
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Ando Shizutoshi
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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Murayama Ikuko
Memory Research & Development Center Texas Instruments Inc.
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Oizumi Munenori
Tsukuba Research And Development Center Texas Instruments Japan Limited
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Fukuda Yukio
Texas Instruments Tsukuba Research & Development Center Ltd.
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Hashimoto Satoshi
Texas Instruments Tsukuba Research And Development Center Limited
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Okuno Yasutoshi
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp., 19, Nishikujo-kasuga cho, Minami-ku, Kyoto 601-8413, Japan
著作論文
- Control of Crystalline Structure and Electrical Properties of TaSiN Thin Film Formed by Reactive RF-Sputtering
- Influence of the Relaxation Current in Ba_xSr_lt(1-x)gtTiO_3 Thin Film Capacitors on DRAM Operation
- Effects of Postannealing in Oxygen Ambient on Leakage Properties of (Ba, Sr)TiO_3 Thin-Film Capacitors
- Dielectric Properties of (Ba, Sr)TiO_3 Thin Films and their Correlation with Oxygen Vacancy Density
- Characterization of a Sol-Get Derived Pb(Zr, Ti)0_3 Thin-Film Capacitor with Polycrystalline SrRu0_3 Electrodes
- Effects of Excess Pb and Substrate on Crystallization Processes of Amorphous Pb(Zr, Ti)O_3 Thin Films Prepared by RF Magnetron Sputtering
- The Effects of La and Nb Modification on Fatigue and Retention Properties of Pb(Ti, Zr)O_3 Thin-Film Capacitors
- Characterization of Sputtered Lead-Zirconate-Titanate Thin Films with Various Compositions
- Recovery of the Ferroelectric Properties of Hydrogen-Damaged Ir/Pb(Zr,Ti)O3/Ir Capacitors by Post Annealing
- Characterization of Switching Properties of Lead-Zirconate-Titanate Thin Films in Ti-Rich Phase