NISHIMURA Akitoshi | Texas Instruments Japan, ULSI Technology Center

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概要

• 同名の論文著者
• Texas Instruments Japan, ULSI Technology Centerの論文著者

関連著者

• Fukuda Y

  Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn

• Fukuda Y

  Department Of Physics Faculty Of Science Kobe University

• Fukuda Yukio

  Texas Instruments Tukuba Research & Development Center Limited

• Kakimi A

  Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn

• AOKI Katsuhiro

  Texas Instruments Tsukuba Research and Development Center, Limited

• Numata K

  The Authors Are With Memory Research & Development Center Texas Instruments Inc.

• Aoki Katsuhiro

  Texas Instruments Tsukuba Research & Development Center Limited

• Nishimura Akitoshi

  The Authors Are With Memory Research & Development Center Texas Instruments Inc.

• NUMATA Ken

  Texas Instruments Japan, ULSI Technology Center

• NISHIMURA Akitoshi

  Texas Instruments Japan, ULSI Technology Center

• Fukuda Yukio

  Texas Instruments Tsukuba Research & Development Center Limited

• SAKAGUCHI Isao

  National Institute for Materials Science

• Okuno Yasutoshi

  Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology

• HANEDA Hajime

  Sensor Materials Center, National Institute for Materials Science

• HANEDA Hajime

  National Institute for Materials Science

• Okuno Y

  Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology

• Haneda Hajime

  National Institute For Research In Inorganic Materials

• Haneda Hajime

  National Institute For Material Science

• Haneda Hajime

  Advanced Materials Laboratory National Institute For Materials Science (nims)

• Sakaguchi I

  Optical Materials Center National Inst. For Materials Sci.

• Sakaguchi Isao

  National Inst. Materials Sci. Ibaraki Jpn

• OKUNO Yasutoshi

  Texas Instruments Japan, ULSI Technology Center

• 奥野 泰利

  日本テキサスインスツルメンツ(株)、ulsi技術開発センター

• 奥野 泰利

  松下電器産業(株)

• Okuno Yasutoshi

  ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp., 19, Nishikujo-kasuga cho, Minami-ku, Kyoto 601-8413, Japan

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著作論文

• Influence of the Relaxation Current in Ba_xSr_lt(1-x)gtTiO_3 Thin Film Capacitors on DRAM Operation
• Dielectric Properties of (Ba, Sr)TiO_3 Thin Films and their Correlation with Oxygen Vacancy Density

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