NUMATA Ken | Texas Instruments Japan, ULSI Technology Center
スポンサーリンク
概要
関連著者
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Fukuda Y
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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Fukuda Y
Department Of Physics Faculty Of Science Kobe University
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Fukuda Yukio
Texas Instruments Tukuba Research & Development Center Limited
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Kakimi A
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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AOKI Katsuhiro
Texas Instruments Tsukuba Research and Development Center, Limited
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Numata K
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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Aoki Katsuhiro
Texas Instruments Tsukuba Research & Development Center Limited
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Nishimura Akitoshi
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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NUMATA Ken
Texas Instruments Japan, ULSI Technology Center
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NISHIMURA Akitoshi
Texas Instruments Japan, ULSI Technology Center
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Fukuda Yukio
Texas Instruments Tsukuba Research & Development Center Limited
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SAKAGUCHI Isao
National Institute for Materials Science
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Okuno Yasutoshi
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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HANEDA Hajime
Sensor Materials Center, National Institute for Materials Science
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HANEDA Hajime
National Institute for Materials Science
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Okuno Y
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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Haneda Hajime
National Institute For Research In Inorganic Materials
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Haneda Hajime
National Institute For Material Science
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Haneda Hajime
Advanced Materials Laboratory National Institute For Materials Science (nims)
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Sakaguchi I
Optical Materials Center National Inst. For Materials Sci.
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Sakaguchi Isao
National Inst. Materials Sci. Ibaraki Jpn
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OKUNO Yasutoshi
Texas Instruments Japan, ULSI Technology Center
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奥野 泰利
日本テキサスインスツルメンツ(株)、ulsi技術開発センター
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奥野 泰利
松下電器産業(株)
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Okuno Yasutoshi
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp., 19, Nishikujo-kasuga cho, Minami-ku, Kyoto 601-8413, Japan
著作論文
- Influence of the Relaxation Current in Ba_xSr_lt(1-x)gtTiO_3 Thin Film Capacitors on DRAM Operation
- Dielectric Properties of (Ba, Sr)TiO_3 Thin Films and their Correlation with Oxygen Vacancy Density