Characterization of Sputtered Lead-Zirconate-Titanate Thin Films with Various Compositions
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概要
- 論文の詳細を見る
Sputtered Pb(Zr,Ti)O_3 (PZT) thin films with various compositions were characterized. Comparing sputtered PZT films with sol-gel PZT films, it was found that the film composition can be approximately estimated from the distance of the PZT (100) lattice plane. The sputtered PZT thin films with a Ti-rich phase showed excellent ferroelectric properties. The remnant polarization density, the coercive field and the saturation voltage of 300-nm-thick PZT capacitors with Zr/Ti = 35/65 were 42 μC/cm^2, 46kV/cm and 3.2 V, respectively. Those of 300-nm-thick PZT capacitors with Zr/Ti = 30/70 were 42 μC/cm^2, 48kV/cm and 2.5 V, respectively. The polarization retention properties of PZT capacitors with a Ti-rich phase are outstanding, and the value of the retained polarization density after 10 years is expected to be larger than 40 μC/cm^2.
- 社団法人応用物理学会の論文
- 1999-06-15
著者
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Sakoda Tatsuya
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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Aoki K
Texas Instruments Japan Ltd. Ibaraki Jpn
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Fukuda Yukio
Texas Instruments Tukuba Research & Development Center Limited
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Fukuda Y
Ntt Optoelectronics Laboratories
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Fukuda Yukio
Tsukuba Research And Development Center Texas Instruments Japan Limited
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AOKI Katsuhiro
Texas Instruments Tsukuba Research and Development Center, Limited
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SAKODA Tomoyuki
Texas Instruments Tsukuba R & D Center
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Aoki K
Toshiba Corp. Yokohama Jpn
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Aoki Katsuhiro
Texas Instruments Tsukuba Research & Development Center Limited
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Sakoda T
National College Of Technology
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Fukuda Yuji
Kansai Photon Science Institute Japan Atomic Energy Agency
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Sakoda Tadanori
Department Of Electronics And Control Engineering Kitakyushu National College Of Technology
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Sakoda Tomoyuki
Si Technology Development Texas Instruments Inc.
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Fukuda Yukio
Texas Instruments Tsukuba Research & Development Center Limited
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Fukuda Yuji
JAEA
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Sakoda Tomoyuki
National College of Technology
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