Recovery of the Ferroelectric Properties of Hydrogen-Damaged Ir/Pb(Zr,Ti)O3/Ir Capacitors by Post Annealing
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概要
- 論文の詳細を見る
In this paper, the recovery of the ferroelectric properties of Ir/Pb(Zr,Ti)O3/Ir thin film capacitors damaged by annealing in a hydrogen ambient has been described. The ferroelectric properties of the capacitors markedly degrade as a result of heat treatment in a hydrogen ambient at 400°C. These properties can be easily recovered to their initial state by post annealing using a rapid thermal annealing process in an oxygen ambient at 400°C for 1 min.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1998-05-15
著者
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Sakoda Tatsuya
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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Aoki K
Texas Instruments Japan Ltd. Ibaraki Jpn
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Fukuda Yukio
Texas Instruments Tukuba Research & Development Center Limited
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Fukuda Y
Ntt Optoelectronics Laboratories
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Fukuda Yukio
Tsukuba Research And Development Center Texas Instruments Japan Limited
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AOKI Katsuhiro
Texas Instruments Tsukuba Research and Development Center, Limited
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SAKODA Tomoyuki
Texas Instruments Tsukuba R & D Center
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Aoki K
Toshiba Corp. Yokohama Jpn
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Aoki Katsuhiro
Texas Instruments Tsukuba Research & Development Center Limited
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Sakoda T
National College Of Technology
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Sakoda Tadanori
Department Of Electronics And Control Engineering Kitakyushu National College Of Technology
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Fukuda Yukio
Texas Instruments Tsukuba Research & Development Center Limited
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