Evaluation of Oxygen-Plasma Damage in GaAs Exposed to a Surface-Wave Plasma Source Developed for the Ashing Process : Nuclear Science, Plasmas, and Electric Discharges

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-09-15

著者

• Aoki K

  Texas Instruments Japan Ltd. Ibaraki Jpn

• UEKUSA Shin-ichiro

  Department of Electronics and Communication, School of Science and Technology, Meiji University

• YAMAUCHI Takeshi

  Corporate Manufacturing Engineering Center, TOSHIBA Corporation

• Yamauchi Takeshi

  Corporate Manufacturing Engineering Center Toshiba Corporation

• Katsumata Hiroshi

  Corporate Manufacturing Engineering Center Toshiba Corporation

• Katsumata Hiroshi

  Electrotechnical Laboratory:meiji University

• Katsumata Hiroshi

  Corporate Manufacturing And Engineering Center Toshiba Corp.

• Uekusa Shin-ichiro

  Department Of Electrical Engineering School Of Science And Technology Meiji University

• Uekusa Shin-ichiro

  School Of Engineering Meiji University

• Uekusa Shin-ichiro

  Department Of Electrical And Electronic Engineering Meiji University

• Aoki K

  Toshiba Corp. Yokohama Jpn

• Uekusa S

  Meiji Univ. Kawasaki Jpn

• AOKI Katsuaki

  Department of Electrical Engineering School of Science and Technology, Meiji University

関連論文

• Stability Evaluation of Inference Methods for Optoelectronic Fuzzy Inference System
• Control of Crystalline Structure and Electrical Properties of TaSiN Thin Film Formed by Reactive RF-Sputtering
• Dramatic Improvement of Surface Wave Plasma Performance Using a Corrugated Dielectric Plate : Nuclear Science, Plasmas, and Electric Discharges
• Self-Aligned Inversion-Mode lnP MISFET
• InP PN Junction Waveguide Made by Mg-Ion Implantation
• Microtrench Generation in SiO_2 Trench Etching for Damascene Interconnection Process
• Oxygen Plasma Damage in GaAs Directly Exposed to Surface-Wave Plasma
• Evaluation of Oxygen-Plasma Damage in GaAs Exposed to a Surface-Wave Plasma Source Developed for the Ashing Process : Nuclear Science, Plasmas, and Electric Discharges
• Postdeposition Annealing Influence on Sputtered Indium Tin Oxide Film Characteristics
• Effect of Multiple-Step Annealing on the Formation of Semiconducting β-FeSi_2 and Metallic α-Fe_2Si_5 on Si (100) by Ion Beam Synthesis
• Sharp Optical Emission from CuInSe_2 Thin Films Grown by Molecular Beam Epitaxy
• Molecular Beam Epitaxial Growth and Properties of CuInSe_2
• Mechanism of Oxidation of Si Surfaces Exposed to O_2/Ar Microwave-Excited Plasma
• Negative Ion Transfer Model of Low-Temperature Oxidation of Silicon Surface by High-Density Microwave Plasma
• Characterization of a New Cleaning Method Using Electrolytic Ionized Water for Polysilicon Chemical Mechanical Polishing Process
• Infrared Thermal Chemical Vapor Deposition of Thin SiN Film on InP : Dependence of Deposition Rate and Film Characteristics on Pressure and Gas Flux Ratio
• Temperature Dependence of TaSiN Thin Film Resistivity from Room Temperature to 900℃ : Semiconductors
• Control of Grain Structure of Sputtering Lead-Zirconate-Titanate Thin Film Using Amorphous Lead-Titanate Buffer Layer
• Characterization of Sputtered Lead-Zirconate-Titanate Thin Films with Various Compositions
• Recovery of the Ferroelectric Properties of Hydrogen-Damaged Ir/Pb(Zr,Ti)O3/Ir Capacitors by Post Annealing
• Characterization of Switching Properties of Lead-Zirconate-Titanate Thin Films in Ti-Rich Phase
• Composition and Growth Mechanisms of a Boron Layer Formed Using the Molecular Layer Doping Process
• Microwave-Excited Large-Area Plasma Source Using a Slot Antenna
• Development of Dishing-less Slurry for Polysilicon Chemical-Mechanical Polishing Process
• Mechanism of Oxidation of Si Surfaces Exposed to O2/Ar Microwave-Excited Plasma
• Plasma Effects on Electrostatic Chuck Characteristics on Capacitive RF Discharge
• Negative Ion Transfer Model of Low-Temperature Oxidation of Silicon Surface by High-Density Microwave Plasma

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