Effect of Multiple-Step Annealing on the Formation of Semiconducting β-FeSi_2 and Metallic α-Fe_2Si_5 on Si (100) by Ion Beam Synthesis

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-05-15

著者

• Shibata Hajime

  Electrotechnical Laboratory

• KOBAYASHI Naoto

  Electrotechnical Laboratory

• MAKITA Yunosuke

  Electrotechnical Laboratory

• UEKUSA Shin-ichiro

  Department of Electronics and Communication, School of Science and Technology, Meiji University

• HASEGAWA Masataka

  Electrotechnical Laboratory

• Katsumata Hiroshi

  Corporate Manufacturing Engineering Center Toshiba Corporation

• Katsumata Hiroshi

  Electrotechnical Laboratory:meiji University

• Uekusa Shin-ichiro

  Department Of Electrical And Electronic Engineering Meiji University

• Uekusa Shin-ichiro

  Department Of Electrical Engineering Meiji University

関連論文

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• Heteroepitaxial Growth of GaP on Silicon by Molecular Beam Epitaxy
• Characterization and Substrate-Temperature Dependence of Crystalline State of GaAs Grown by Molecular Beam Epitaxy
• Effect of Degradation on Intensity Fluctuation in cw AlGaAs Double-Heterostructure Junction Lasers
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• The Initial Growth Stage of the InAs Quantum Well Structures on Variously Oriented GaAs Substrates
• Oxygen Plasma Damage in GaAs Directly Exposed to Surface-Wave Plasma
• Evaluation of Oxygen-Plasma Damage in GaAs Exposed to a Surface-Wave Plasma Source Developed for the Ashing Process : Nuclear Science, Plasmas, and Electric Discharges
• Effect of Multiple-Step Annealing on the Formation of Semiconducting β-FeSi_2 and Metallic α-Fe_2Si_5 on Si (100) by Ion Beam Synthesis
• Sharp Optical Emission from CuInSe_2 Thin Films Grown by Molecular Beam Epitaxy
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• A Molecular and Jon-Beam Epitaxy System for the Growth of III-V Compound Semiconductors Using a Mass-Separated, Low-Energy Group-V Jon Beam
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• Synthesis and Properties of Semiconducting Iron Disilicide β-FeSi_2
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• Deposition of SiO_2 Thin Films by Combined Low-Energy Ion-Beam and Molecular-Beam Epitaxial Method
• Negative Thermal Quenching Curves in Photoluminescence of Solids
• Calculation of Helium Dissociation Energies for Vanadium,Niobium and Molybdenum by a Computer Simulation Method
• Development of Dishing-less Slurry for Polysilicon Chemical-Mechanical Polishing Process
• Cross section measurements of 27Al(n,.ALPHA.)21Na and 56Fe(n,p)56Mn reactions for neutron energies between 14.0 and 19.9MeV.

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