Influence of a Surface on the Franz-Keldysh Effect in n-and p-type GaAs Epitaxial Layers : Condensed Matter: Electronic Properties, etc.

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概要

• 論文の詳細を見る

• We have performed a photoreflectance study of epitaxial n- and p-type GaAs layers having various carrier densities ranged between 3.0 ×10^<14> and 5.8 ×10^<17> cm^<-3> in order to investigate influence of a surface on the Franz-Keldysh (FK) effect associated with the E_0 direct gap. It was found both in n- and in p-type GaAs that the observed FK oscillation periods are small by factors ranged between 1.3 and 2.1 compared to those expected from the built-in surface electric fields (ε_<dc>). A measurement of the surface photovoltaic energy suggests that modifying the surface Fermi energies (E_<FS>) is less feasible than using the E_<FS> Values ranged between 0.7 and 0.8 eV (0.5 and 0.6 eV) for n-type(p-type) GaAs, that were studied in literature and used also in this study to estimate ε_<dc>'s. We explain the reduction in the FK oscillation periods and its carrier density variations in terms of the crystal termination effect which gives rise to an optically inactive region beneath the crystal surface.

• 社団法人日本物理学会の論文
• 2001-04-15

著者

• Shibata Hajime

  Electrotechnical Laboratory

• Sakai Masamichi

  Department Of Chemistry Graduate School Of Science Hiroshima University

• Sakai Masamichi

  Department Of Functional Materials Science Saitama University

• Shinohara M

  Ntt Multimedia Business Dep. Tokyo

• SHINOHARA Masanori

  NTT Multimedia Business Department 2-2-2

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