Effect of Degradation on Intensity Fluctuation in cw AlGaAs Double-Heterostructure Junction Lasers

スポンサーリンク

概要

著者

関連論文

Implementation of Optical Ternary Logic Operations Using a Twin-Stripe Laser Diode
Beam Scanning Binary Logic (OPTICAL COMPUTING 1)
LPE Growth of AlGaAs-GaAs Quantum Well Heterostructures
Diffusion Properties of Mg in Al_xGa_As
LPE Growth and Luminescence of InGaAsP Lattice-Matched to (1, 0, 0) GaAs Substrates : SOLID SOLUTIONS
Translational Phase Domains in the Cation Sublattice of Chalcopyrite Compounds
The Effect of Doping on Interface Morphology in LPE Al_xGa_As
Zn, Te and Se Doping of LPE InGaPAs_ Grown on (100) GaAs Substrates
Analysis of Modes in a Vertical Cavity Surface Emitting Laser with Multilayer Bragg Reflectors
LPE Growth of In_Ga_xP_As_z (z≦0.01) on (100) GaAs Substrates and Its Lattice Constants and Photoluminescence
LPE Growth and Luminescence of In_Ga_xP_yAs_ on (1, 0, 0) GaAs with Band-Gap Energy in Region of 1.569 eV≤E_g≤1.893 eV
Fabrication and Visible-Light-Emission Characteristics of Room-Temperature-Operated InGaPAs DH Diode Lasers Grown on GaAs Substrates
Surface Decomposition of GaAs Substrates in LPE Growth of InGaAsP and Its Effect on Crystal Quality
An LPE Growth Method to Reduce Thermal Degradation of Substrates
Heteroepitaxial Growth of GaP on Silicon by Molecular Beam Epitaxy
Molecular Beam Epitaxial Growth of InP
Characterization and Substrate-Temperature Dependence of Crystalline State of GaAs Grown by Molecular Beam Epitaxy
Effect of Degradation on Intensity Fluctuation in cw AlGaAs Double-Heterostructure Junction Lasers
The Initial Growth Stage of the InAs Quantum Well Structures on Variously Oriented GaAs Substrates
Effect of Multiple-Step Annealing on the Formation of Semiconducting β-FeSi_2 and Metallic α-Fe_2Si_5 on Si (100) by Ion Beam Synthesis
Sharp Optical Emission from CuInSe_2 Thin Films Grown by Molecular Beam Epitaxy
Molecular Beam Epitaxial Growth and Properties of CuInSe_2
A Molecular and Jon-Beam Epitaxy System for the Growth of III-V Compound Semiconductors Using a Mass-Separated, Low-Energy Group-V Jon Beam
Photoluminescence of Indirect-Band-Gap GaAs_P_x (x=0.52) Implanted with Nitrogen Ions
Hot Implantation of Nitrogen Ions into GaAs_P_x (x=0.36)
Temperature Dependence of the Resistivity in the Impurity Conduction of n-type Germanium
Synthesis and Properties of Semiconducting Iron Disilicide β-FeSi_2
Photoluminescence of Nitrogen-Implanted GaAs_P_x (x=0.44) near the Direct-Indirect-Transition Point
Molecular Beam Epitaxy of GaP and GaAs_P_x
Annealing Temperature Dependence of Photoluminescence in N-Implanted GaAs_P_x (x=0.36)
Laser Emission in Nitrogen-Implanted GaAs_P_x(x=0.36 and 0.43)
Photoluminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy
Growth Rate and Sticking Coefficient of ZnSe and ZnTe Grown by Molecular Beam Epitaxy
Molecular Beam Epitaxy of ZnTe Single Crystal Thin Films

もっと見る

スポンサーリンク