Zn, Te and Se Doping of LPE InGaPAs_<0.01> Grown on (100) GaAs Substrates
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1982-08-20
著者
-
Mukai Seiji
Electrotechnical Laboratory:on Leave Of Abesence From Waseda University
-
Mukai Seiji
Electrotechnical Laboratory
関連論文
- Implementation of Optical Ternary Logic Operations Using a Twin-Stripe Laser Diode
- Beam Scanning Binary Logic (OPTICAL COMPUTING 1)
- LPE Growth of AlGaAs-GaAs Quantum Well Heterostructures
- Diffusion Properties of Mg in Al_xGa_As
- LPE Growth and Luminescence of InGaAsP Lattice-Matched to (1, 0, 0) GaAs Substrates : SOLID SOLUTIONS
- The Effect of Doping on Interface Morphology in LPE Al_xGa_As
- Zn, Te and Se Doping of LPE InGaPAs_ Grown on (100) GaAs Substrates
- Analysis of Modes in a Vertical Cavity Surface Emitting Laser with Multilayer Bragg Reflectors
- LPE Growth of In_Ga_xP_As_z (z≦0.01) on (100) GaAs Substrates and Its Lattice Constants and Photoluminescence
- LPE Growth and Luminescence of In_Ga_xP_yAs_ on (1, 0, 0) GaAs with Band-Gap Energy in Region of 1.569 eV≤E_g≤1.893 eV
- Fabrication and Visible-Light-Emission Characteristics of Room-Temperature-Operated InGaPAs DH Diode Lasers Grown on GaAs Substrates
- Surface Decomposition of GaAs Substrates in LPE Growth of InGaAsP and Its Effect on Crystal Quality
- An LPE Growth Method to Reduce Thermal Degradation of Substrates
- Heteroepitaxial Growth of GaP on Silicon by Molecular Beam Epitaxy
- Molecular Beam Epitaxial Growth of InP
- Characterization and Substrate-Temperature Dependence of Crystalline State of GaAs Grown by Molecular Beam Epitaxy
- Effect of Degradation on Intensity Fluctuation in cw AlGaAs Double-Heterostructure Junction Lasers