LPE Growth and Luminescence of In_<1-x>Ga_xP_yAs_<1-y> on (1, 0, 0) GaAs with Band-Gap Energy in Region of 1.569 eV≤E_g≤1.893 eV

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1980-09-05

著者

• Mukai Seiji

  Electrotechnical Laboratory:on Leave Of Abesence From Waseda University

• Mukai Seiji

  Electrotechnical Laboratory

• MATSUZAKI Masatoshi

  Electrotechnical Laboratory

• Matsuzaki Masatoshi

  Electrotechnical Laboratory:(present Address) Konishiroku Photo Industry Co. Ltd.

• Shimada Jun'ichi

  Electrotechnical Laboratory

関連論文

• Implementation of Optical Ternary Logic Operations Using a Twin-Stripe Laser Diode
• Beam Scanning Binary Logic (OPTICAL COMPUTING 1)
• LPE Growth of AlGaAs-GaAs Quantum Well Heterostructures
• Diffusion Properties of Mg in Al_xGa_As
• LPE Growth and Luminescence of InGaAsP Lattice-Matched to (1, 0, 0) GaAs Substrates : SOLID SOLUTIONS
• The Effect of Doping on Interface Morphology in LPE Al_xGa_As
• Zn, Te and Se Doping of LPE InGaPAs_ Grown on (100) GaAs Substrates
• Analysis of Modes in a Vertical Cavity Surface Emitting Laser with Multilayer Bragg Reflectors
• LPE Growth of In_Ga_xP_As_z (z≦0.01) on (100) GaAs Substrates and Its Lattice Constants and Photoluminescence
• LPE Growth and Luminescence of In_Ga_xP_yAs_ on (1, 0, 0) GaAs with Band-Gap Energy in Region of 1.569 eV≤E_g≤1.893 eV
• Fabrication and Visible-Light-Emission Characteristics of Room-Temperature-Operated InGaPAs DH Diode Lasers Grown on GaAs Substrates
• Surface Decomposition of GaAs Substrates in LPE Growth of InGaAsP and Its Effect on Crystal Quality
• An LPE Growth Method to Reduce Thermal Degradation of Substrates
• Heteroepitaxial Growth of GaP on Silicon by Molecular Beam Epitaxy
• Molecular Beam Epitaxial Growth of InP
• Characterization and Substrate-Temperature Dependence of Crystalline State of GaAs Grown by Molecular Beam Epitaxy
• Effect of Degradation on Intensity Fluctuation in cw AlGaAs Double-Heterostructure Junction Lasers

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