Molecular Beam Epitaxial Growth of InP
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1976-12-05
著者
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Mukai Seiji
Electrotechnical Laboratory:on Leave Of Abesence From Waseda University
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Mukai Seiji
Electrotechnical Laboratory
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GONDA Shun-ichi
Electrotechnical Laboratory
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MATSUSHIMA Yuichi
Electrotechnical Laboratory
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HIROFUJI Yuichi
Electrotechnical Laboratory
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KIMATA Morihiko
Waseda University
関連論文
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- Diffusion Properties of Mg in Al_xGa_As
- LPE Growth and Luminescence of InGaAsP Lattice-Matched to (1, 0, 0) GaAs Substrates : SOLID SOLUTIONS
- The Effect of Doping on Interface Morphology in LPE Al_xGa_As
- Zn, Te and Se Doping of LPE InGaPAs_ Grown on (100) GaAs Substrates
- Analysis of Modes in a Vertical Cavity Surface Emitting Laser with Multilayer Bragg Reflectors
- LPE Growth of In_Ga_xP_As_z (z≦0.01) on (100) GaAs Substrates and Its Lattice Constants and Photoluminescence
- LPE Growth and Luminescence of In_Ga_xP_yAs_ on (1, 0, 0) GaAs with Band-Gap Energy in Region of 1.569 eV≤E_g≤1.893 eV
- Fabrication and Visible-Light-Emission Characteristics of Room-Temperature-Operated InGaPAs DH Diode Lasers Grown on GaAs Substrates
- Surface Decomposition of GaAs Substrates in LPE Growth of InGaAsP and Its Effect on Crystal Quality
- An LPE Growth Method to Reduce Thermal Degradation of Substrates
- Heteroepitaxial Growth of GaP on Silicon by Molecular Beam Epitaxy
- Molecular Beam Epitaxial Growth of InP
- Characterization and Substrate-Temperature Dependence of Crystalline State of GaAs Grown by Molecular Beam Epitaxy
- Effect of Degradation on Intensity Fluctuation in cw AlGaAs Double-Heterostructure Junction Lasers
- Photoluminescence of Indirect-Band-Gap GaAs_P_x (x=0.52) Implanted with Nitrogen Ions
- Hot Implantation of Nitrogen Ions into GaAs_P_x (x=0.36)
- Temperature Dependence of the Resistivity in the Impurity Conduction of n-type Germanium
- Photoluminescence of Nitrogen-Implanted GaAs_P_x (x=0.44) near the Direct-Indirect-Transition Point
- Molecular Beam Epitaxy of GaP and GaAs_P_x
- Annealing Temperature Dependence of Photoluminescence in N-Implanted GaAs_P_x (x=0.36)
- Laser Emission in Nitrogen-Implanted GaAs_P_x(x=0.36 and 0.43)