Molecular Beam Epitaxy of GaP and GaAs_<1-x>P_x
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GaP and GaAs_<1-x>P_x single crystal thin films were successfully grown on (100)-oriented GaP substrates by molecular beam epitaxy. At lower substrate temperatures these materials have a tendency to grow in pyramidal forms. However, at substrate temperatures of 560〜600℃, single crystalline films with high crystallographic quality and flat surfaces are grown at the intensity ratio of molecular beams, P/Ga, of about 100. The composition ratio x of GaAs_<1-x>P_x is dependent on the substrate temperature, T_s, and the intensity ratio P/As. The rate of decrease, -dx/dT_s, is found to be 0.003℃^<-1> for the entire composition-ratio range.
- 社団法人応用物理学会の論文
- 1976-11-05
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