GONDA Shun-ichi | Electrotechnical Laboratory
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概要
関連著者
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GONDA Shun-ichi
Electrotechnical Laboratory
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MAKITA Yunosuke
Electrotechnical Laboratory
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Mukai Seiji
Electrotechnical Laboratory:on Leave Of Abesence From Waseda University
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Mukai Seiji
Electrotechnical Laboratory
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MATSUSHIMA Yuichi
Electrotechnical Laboratory
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Makita Yoji
Marine Resources and Environment Institute, National Institute of Advanced Industrial Science and Technology (AIST)
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Maekawa Shigeru
Electrotechnical Laboratory
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Maekawa Shigeru
Electronical Laboratory
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Tanoue Hisao
Electrotechnical Laboratory
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Tsurushima Toshio
Electrotechnical Laboratory
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SHINDO Masanari
Electrotechnical Laboratory
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IGARASHI osamu
Electrotechnical Laboratory
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HIROFUJI Yuichi
Electrotechnical Laboratory
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KIMATA Morihiko
Waseda University
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SASAKI Wataru
Electrotechnical Laboratory
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INOUE Masasi
Technical Research Laboratory, Wireles Division, Matsushita Electric Ind. Co., Ltd.
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Shindo Masanari
Electrotechnical Laboratory:konishiroku Photo Ind. Co. Ltd.
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YANAGAWA Coji
Electrotechnical Laboratory
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Sasaki Wataru
Electrotechnical Labolatory
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Inoue Masasi
Technical Research Laboratory Wireles Division Matsushita Electric Ind. Co. Ltd.
著作論文
- The Effect of Doping on Interface Morphology in LPE Al_xGa_As
- Heteroepitaxial Growth of GaP on Silicon by Molecular Beam Epitaxy
- Molecular Beam Epitaxial Growth of InP
- Characterization and Substrate-Temperature Dependence of Crystalline State of GaAs Grown by Molecular Beam Epitaxy
- Effect of Degradation on Intensity Fluctuation in cw AlGaAs Double-Heterostructure Junction Lasers
- Photoluminescence of Indirect-Band-Gap GaAs_P_x (x=0.52) Implanted with Nitrogen Ions
- Hot Implantation of Nitrogen Ions into GaAs_P_x (x=0.36)
- Temperature Dependence of the Resistivity in the Impurity Conduction of n-type Germanium
- Photoluminescence of Nitrogen-Implanted GaAs_P_x (x=0.44) near the Direct-Indirect-Transition Point
- Molecular Beam Epitaxy of GaP and GaAs_P_x
- Annealing Temperature Dependence of Photoluminescence in N-Implanted GaAs_P_x (x=0.36)
- Laser Emission in Nitrogen-Implanted GaAs_P_x(x=0.36 and 0.43)