IGARASHI osamu | Electrotechnical Laboratory
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概要
関連著者
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IGARASHI osamu
Electrotechnical Laboratory
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MAKITA Yunosuke
Electrotechnical Laboratory
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山田 晃
東京農工大学生物システム応用科学府
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Aoki K
Texas Instruments Japan Ltd. Ibaraki Jpn
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YAMADA Akimasa
Electrotechnical Laboratory
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OBARA Akira
Electrotechnical Laboratory
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NIKI Shigeru
Electrotechnical Laboratory
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Aoki K
Toshiba Corp. Yokohama Jpn
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Makita Y
Marine Resources And Environment Institute National Institute Of Advanced Industrial Science And Tec
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Niki S
Optoelectronic Materials And Devices Group Photonics Research Institute National Institute Of Advanc
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Misawa S
Tsukuba Institute For Super Materials Ulvac Japan Ltd.
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Igarashi O
Department Of Life Science Ibaraki Christian University
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Igarashi O
Ibaraki Christian Univ. Hitachi Jpn
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Igarashi Osamu
Joining And Welding Research Institute Osaka University
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AOKI Kazuhiro
Nippon Institute of Technology
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KUTSUWADA Noboru
Nippon Institute of Technology
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Makita Yoji
Marine Resources and Environment Institute, National Institute of Advanced Industrial Science and Technology (AIST)
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Mukai Seiji
Electrotechnical Laboratory:on Leave Of Abesence From Waseda University
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Mukai Seiji
Electrotechnical Laboratory
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GONDA Shun-ichi
Electrotechnical Laboratory
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MATSUSHIMA Yuichi
Electrotechnical Laboratory
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Igarashi O
Electrotechnical Lab. Ibaraki Jpn
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Okada Yasumasa
Electrotechnical Laboratory
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MISAWA Syunji
ULVAC Japan Ltd., Tsukuba Research Laboratory
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MISAWA Syunji
Electrotechnical Laboratory, MITI
著作論文
- Heteroepitaxial Growth of GaP on Silicon by Molecular Beam Epitaxy
- Sharp Optical Emission from CuInSe_2 Thin Films Grown by Molecular Beam Epitaxy
- Molecular Beam Epitaxial Growth and Properties of CuInSe_2
- Epitaxial Growth of CuGaS_2 by Halogen Transport Method
- Epitaxial Growth of GaN_P_x(x≲4) on Sapphire Substrates
- Measurement of Misalignments between the [111] Axes of GaP Deposits and Si Substrates by the X-Ray Divergent Beam Method
- Two-Stage Epitaxial Growth of GaP on Si
- Heteroepitaxial Growth of GaN_P_x (x≲0.09) on Sapphire Substrates
- Epitaxial Growth of InN by Halogen Transport Method
- Effects of Substrate Misorientation on Heteroepitaxial Growth of GaP on Si
- The Crystallographic Structure of the Star-Like Growth Hillocks in CdS Deposited on the (111)B Face of GaAs
- Epitaxial Growth of Mo Single Crystal on Sapphire by H_2 Reduction of MoO_3 and Characterization by Reflection High-Energy Electron Diffraction
- Heteroepitaxial Growth of GaN_1-_xP_x(x≲0.06) on Sapphire Substrates : Semiconductors and Semiconductor Devices
- (112)-Oriented Growth of CuInSe_2 on (001) Mo Single-Crystal Substrates
- Growth Hillocks and Crystal Structures in Heteroepitaxial CdS Deposited on GaAs