Heteroepitaxial Growth of GaN_<1-x>P_x (x≲0.09) on Sapphire Substrates
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概要
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Gallium nitride phosphide single crystals having the maximum composition of x∼0.09 were epitaxially deposited on (0001) sapphire substrates. The growth was carried out by the vapor phase reaction of the Ga-Br_2-PH_3-NH_3-N_2 system. The above maximum composition was attained at a substrate temperature of 980℃.
- 社団法人応用物理学会の論文
- 1992-12-15
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