Measurement of Misalignments between the [111] Axes of GaP Deposits and Si Substrates by the X-Ray Divergent Beam Method
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概要
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Single-crystal GaP layers, about 3 μm thick, were deposited by the vapor growth technique on Si substrate wafers which were intentionally misorientated up to 18°from the (111) face. The divergent beam technique of X-ray diffraction was used for analyzing the lattice misorientation on the GaP on Si. The [111] axis of the GaP deposits and that of Si substrates were not exactly parallel. The dependence of the degree of angular misalignment between the two [111] axes on the substrate orientations is described.
- 社団法人応用物理学会の論文
- 1976-08-05
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