(112)-Oriented Growth of CuInSe_2 on (001) Mo Single-Crystal Substrates
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CuInSe_2 depositions on (001) Mo single-crystal substrates were achieved by the Se(CH_3)_2-halogen transport method and the crystallinity of the layers were characterized by reflection high-energy electron diffraction. On the (001) Mo substrates, {001} CuInSe_2 was not obtained; CnInSe_2 deposited on (001) Mo was composed of four sets of (112)-oriented crystallites which were rotated every 90° about the substrate surface normal. To explain the appearance of the (112) plane, a minimum lattice-mismatch criterion taking into consideration the fact that Mo has a bcc structure was proposed. To obtain Debye-Scherrer-ring-free CuInSe_2 films, introducing Br_2 to transport In and Cu before introducing Se(CH_3)_2 was essential.
- 社団法人応用物理学会の論文
- 1995-11-15
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