Epitaxial Growth of Mo Single Crystal on Sapphire by H_2 Reduction of MoO_3 and Characterization by Reflection High-Energy Electron Diffraction
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Mo depositions on sapphire (Al_2O_3) were effected by H_2 reduction of MoO_3, and the crystallinity of the films was characterized by reflection high-energy electron diffraction (RHEED). In the case of growth on the (11^^-02) Al_2O_3 substrates, single-crystal epitaxial growth of (001) Mo was realized. On (0001) Al_2O_3, single-crystal Mo was not obtained; Mo deposited on (0001) Al_2O_3 was composed of three sets of (110)-oriented crystallites. To obtain Debye-Scherrer ring-free Mo films whose RHEED patterns did not include arcs, growth temperatures of 890 and 920℃ were required in growths on (11^^-02) and (0001) Al_2O_3 substrates, respectively.
- 社団法人応用物理学会の論文
- 1995-05-01
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