Heteroepitaxial Growth of GaN_1-_xP_x(x≲0.06) on Sapphire Substrates : Semiconductors and Semiconductor Devices
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Gallium nitride phosphide (GaN_<1-x>P_x) was epitaxially deposited on (0001) sapphire substrates by the vapor phase reaction of the Ga-Br_2-NH_3-PH_3-N_2 system. It was found that the composition x and the growth rate of the GaN_<1-x>P_x single crystal strongly depend on the substrate temperature and the flow rate of PH_3 introduced into a reaction tube. The composition x increased with decreasing substrate temperature. The maximum composition x obtained was 0.064 at a substrate temperature of 1000℃. The growth rate increased with increasing flow rate of PH_3 introduced into the reaction tube. At a substrate temperature of 1030℃, the growth rate of GaN_<1-x>P_x(x≈0.05) was 22 times larger than that of GaN. The diffraction lines observed on back-reflection divergent beam patterns of the GaN_<1-x>P_x single crystal were broad and did not show the separation due to K<α1> and K<α2> radiation.
- 社団法人応用物理学会の論文
- 1988-05-20
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