Epitaxial Growth of GaN_<1-x>P_x(x≲4) on Sapphire Substrates

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概要

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• Gallium nitride phosphide (GaN_<1-x>P_x) was epitaxially deposited on (0001) sapphire substrates by the vapor phase reaction of the Ga-NH_3-PCl_3-N_2 system. The growth rate was 0.80 μm/ hr at 1100℃ and decreased with decreasing growth temperature. Composition x increased with decreasing growth temperature. The maximum composition x obtained was about 0.04 at 1050℃.

• 社団法人応用物理学会の論文
• 1985-10-20

著者

• IGARASHI osamu

  Electrotechnical Laboratory

• Okada Yasumasa

  Electrotechnical Laboratory

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