Epitaxial Growth of GaN_<1-x>P_x(x≲4) on Sapphire Substrates
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Gallium nitride phosphide (GaN_<1-x>P_x) was epitaxially deposited on (0001) sapphire substrates by the vapor phase reaction of the Ga-NH_3-PCl_3-N_2 system. The growth rate was 0.80 μm/ hr at 1100℃ and decreased with decreasing growth temperature. Composition x increased with decreasing growth temperature. The maximum composition x obtained was about 0.04 at 1050℃.
- 社団法人応用物理学会の論文
- 1985-10-20
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